Transport of electrons in a GaAs quantum well in high electric fields

The rates of intrasubband and intersubband scattering of electrons by polar optical and intervalley phonons are determined in relation to the electron energy and width of a deep rectangular quantum well in GaAs. The Monte Carlo method was used to calculate the field dependences of the electron’s dri...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2009-09, Vol.43 (9), p.1177-1181
Main Authors: Požela, J., Požela, K., Raguotis, R., Juciené, V.
Format: Article
Language:English
Subjects:
ARSENIC COMPOUNDS
ARSENIDES
CALCULATION METHODS
ELECTRIC FIELDS
ELECTRON DRIFT
ELECTRONS
ELEMENTARY PARTICLES
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LEPTONS
Low-Dimensional Systems
Magnetic Materials
Magnetism
MATERIALS SCIENCE
MONTE CARLO METHOD
NANOSTRUCTURES
PHONONS
Physics
Physics and Astronomy
PNICTIDES
QUANTUM WELLS
QUASI PARTICLES
SATURATION
SCATTERING
VELOCITY
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Summary:The rates of intrasubband and intersubband scattering of electrons by polar optical and intervalley phonons are determined in relation to the electron energy and width of a deep rectangular quantum well in GaAs. The Monte Carlo method was used to calculate the field dependences of the electron’s drift velocity in quantum wells with the width of 10, 20, and 30 nm. It is shown that the drift velocity in high electric fields in a quantum well vastly exceeds the maximum drift’s saturation velocity in the bulk material.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782609090140