Silicate-free growth of high-quality ultrathin cerium oxide films on Si(111)

Ultrathin Ce{sub 2}O{sub 3} layers have been grown on Si(111) by reactive metal deposition in an oxygen background and characterized by x-ray standing waves, x-ray diffraction, x-ray photoelectron spectroscopy, and low-energy electron diffraction to elucidate and quantify both atomic structure and c...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2011-12, Vol.84 (23), Article 235418
Main Authors: Flege, Jan Ingo, Kaemena, Björn, Gevers, Sebastian, Bertram, Florian, Wilkens, Torsten, Bruns, Daniel, Bätjer, Jan, Schmidt, Thomas, Wollschläger, Joachim, Falta, Jens
Format: Article
Language:English
Subjects:
CERIUM COMPOUNDS
CERIUM OXIDES
CERIUM SILICATES
CHALCOGENIDES
CHLORINE
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DEPOSITION
DIFFRACTION
ELECTROMAGNETIC RADIATION
ELECTRON DIFFRACTION
ELECTRON SPECTROSCOPY
ELEMENTS
EPITAXY
HALOGENS
INTERFACES
IONIZING RADIATIONS
LAYERS
MATERIALS SCIENCE
NONMETALS
OXIDES
OXYGEN
OXYGEN COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
RADIATIONS
RARE EARTH COMPOUNDS
SCATTERING
SEMIMETALS
SILICATES
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SPECTROSCOPY
STANDING WAVES
SUBSTRATES
THIN FILMS
X RADIATION
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY
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Description
Summary:Ultrathin Ce{sub 2}O{sub 3} layers have been grown on Si(111) by reactive metal deposition in an oxygen background and characterized by x-ray standing waves, x-ray diffraction, x-ray photoelectron spectroscopy, and low-energy electron diffraction to elucidate and quantify both atomic structure and chemical composition. It is demonstrated that highly ordered, mostly B-oriented, epitaxial ceria films can be achieved by preadsorption of a monolayer of atomic chlorine, effectively passivating the substrate and thereby suppressing cerium silicate and silicon oxide formation at the interface.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.84.235418