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Analytical Study of BAM (Al/GaAs) and Photovoltaic Samples Using State-of-The-Art Auger Nanoprobes

For the analysis of certified semiconducting Al{sub 0.7}Ga{sub 0.3}As/GaAs superlattices and photovoltaic samples, we used new generations Auger nano-probes such as the JEOL JAMP-9500F Field emission Microprobe and the PHI-700 Xi system. These nano-probes are generally used for the chemical analysis...

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Main Authors: Yadav, P., CEA-LETI, MINATEC Campus, 17 rue des Martyrs - 38054 Grenoble Cedex 9, Bouttemy, M., Vigneron, J., Etcheberry, A., Martinez, E., Renault, O., Mur, P., Chabli, A., Munoz, D.
Format: Conference Proceeding
Language:English
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Summary:For the analysis of certified semiconducting Al{sub 0.7}Ga{sub 0.3}As/GaAs superlattices and photovoltaic samples, we used new generations Auger nano-probes such as the JEOL JAMP-9500F Field emission Microprobe and the PHI-700 Xi system. These nano-probes are generally used for the chemical analysis of complex nano-structures at the deca-nanometric scale. In this paper, we first used both systems for the determination of the surface composition of an Al{sub 0.7}Ga{sub 0.3}As/GaAs reference sample. In that, we studied the impact of surface topography on the Auger analysis. Secondly, we used both systems for chemical analysis of photovoltaic samples. Here, we investigated the in-depth chemical composition, in particular the a-Si:H (n)/ZnO/Al and ITO/a-Si:H (p) interfaces, after a specific cross-section preparation. However, limitations such as image drift due to acoustic vibration and heating effects due to continuous bombardment of energetic electrons at the same point are still a big challenge for quick, routine analysis.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.3657875