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Metrology and Characterization Challenges for Emerging Research Materials and Devices
The International Technology Roadmap for Semiconductors (ITRS) Emerging Research Materials (ERM) and Emerging Research Devices (ERD) Technology Workgroups have identified materials and devices that could enable continued increases in the density and performance of future integrated circuit (IC) tech...
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creator | Garner, C. Michael Herr, Dan Obeng, Yaw |
description | The International Technology Roadmap for Semiconductors (ITRS) Emerging Research Materials (ERM) and Emerging Research Devices (ERD) Technology Workgroups have identified materials and devices that could enable continued increases in the density and performance of future integrated circuit (IC) technologies and the challenges that must be overcome; however, this will require significant advances in metrology and characterization to enable progress. New memory devices and beyond CMOS logic devices operate with new state variables (e.g., spin, redox state, etc.) and metrology and characterization techniques are needed to verify their switching mechanisms and scalability, and enable improvement of operation of these devices. Similarly, new materials and processes are needed to enable these new devices. Additionally, characterization is needed to verify that the materials and their interfaces have been fabricated with required quality and performance. |
doi_str_mv | 10.1063/1.3657864 |
format | conference_proceeding |
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Michael ; Herr, Dan ; Obeng, Yaw</creator><creatorcontrib>Garner, C. Michael ; Herr, Dan ; Obeng, Yaw</creatorcontrib><description>The International Technology Roadmap for Semiconductors (ITRS) Emerging Research Materials (ERM) and Emerging Research Devices (ERD) Technology Workgroups have identified materials and devices that could enable continued increases in the density and performance of future integrated circuit (IC) technologies and the challenges that must be overcome; however, this will require significant advances in metrology and characterization to enable progress. New memory devices and beyond CMOS logic devices operate with new state variables (e.g., spin, redox state, etc.) and metrology and characterization techniques are needed to verify their switching mechanisms and scalability, and enable improvement of operation of these devices. Similarly, new materials and processes are needed to enable these new devices. 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Michael</creatorcontrib><creatorcontrib>Herr, Dan</creatorcontrib><creatorcontrib>Obeng, Yaw</creatorcontrib><title>Metrology and Characterization Challenges for Emerging Research Materials and Devices</title><title>AIP conference proceedings</title><description>The International Technology Roadmap for Semiconductors (ITRS) Emerging Research Materials (ERM) and Emerging Research Devices (ERD) Technology Workgroups have identified materials and devices that could enable continued increases in the density and performance of future integrated circuit (IC) technologies and the challenges that must be overcome; however, this will require significant advances in metrology and characterization to enable progress. New memory devices and beyond CMOS logic devices operate with new state variables (e.g., spin, redox state, etc.) and metrology and characterization techniques are needed to verify their switching mechanisms and scalability, and enable improvement of operation of these devices. Similarly, new materials and processes are needed to enable these new devices. Additionally, characterization is needed to verify that the materials and their interfaces have been fabricated with required quality and performance.</description><subject>DENSITY</subject><subject>ELECTRONIC CIRCUITS</subject><subject>ELECTRONIC EQUIPMENT</subject><subject>ENGINEERING</subject><subject>INTEGRATED CIRCUITS</subject><subject>INTERFACES</subject><subject>MANAGEMENT</subject><subject>MATERIALS</subject><subject>MATERIALS SCIENCE</subject><subject>MEASURING METHODS</subject><subject>MEMORY DEVICES</subject><subject>MICROELECTRONIC CIRCUITS</subject><subject>OPERATION</subject><subject>PHYSICAL PROPERTIES</subject><subject>SEMICONDUCTOR MATERIALS</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotjM1KAzEYRYMoOFYXvkHA9dR8-fmSLKXWKrQIYsFdSTOZHxkTmARBn95WXd3L4dxLyDWwOTAUtzAXqLRBeUIqUApqjYCnpGLMyppL8XZOLnJ-Z4xbrU1FtptQpjSm7ou62NBF7ybnS5iGb1eGFI9gHEPsQqZtmujyI0zdEDv6EnJwk-_pxh1tN-bf_X34HHzIl-SsPaBw9Z8zsn1Yvi4e6_Xz6mlxt64TGFFqC2rfWmCNVk4ZaRuBErVvDUNmLFgEZvihofet4s2-lVoqwb0wGhV6LWbk5u835TLssh9K8L1PMQZfdhwQOGgrfgCkb1BT</recordid><startdate>20110101</startdate><enddate>20110101</enddate><creator>Garner, C. 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Michael ; Herr, Dan ; Obeng, Yaw</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-o183t-915bf910d75a5849d36467cf80608919610820896ccf52dbf474532c387656c73</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>DENSITY</topic><topic>ELECTRONIC CIRCUITS</topic><topic>ELECTRONIC EQUIPMENT</topic><topic>ENGINEERING</topic><topic>INTEGRATED CIRCUITS</topic><topic>INTERFACES</topic><topic>MANAGEMENT</topic><topic>MATERIALS</topic><topic>MATERIALS SCIENCE</topic><topic>MEASURING METHODS</topic><topic>MEMORY DEVICES</topic><topic>MICROELECTRONIC CIRCUITS</topic><topic>OPERATION</topic><topic>PHYSICAL PROPERTIES</topic><topic>SEMICONDUCTOR MATERIALS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Garner, C. Michael</creatorcontrib><creatorcontrib>Herr, Dan</creatorcontrib><creatorcontrib>Obeng, Yaw</creatorcontrib><collection>OSTI.GOV</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Garner, C. Michael</au><au>Herr, Dan</au><au>Obeng, Yaw</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Metrology and Characterization Challenges for Emerging Research Materials and Devices</atitle><btitle>AIP conference proceedings</btitle><date>2011-01-01</date><risdate>2011</risdate><volume>1395</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><abstract>The International Technology Roadmap for Semiconductors (ITRS) Emerging Research Materials (ERM) and Emerging Research Devices (ERD) Technology Workgroups have identified materials and devices that could enable continued increases in the density and performance of future integrated circuit (IC) technologies and the challenges that must be overcome; however, this will require significant advances in metrology and characterization to enable progress. 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identifier | ISSN: 0094-243X |
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source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
subjects | DENSITY ELECTRONIC CIRCUITS ELECTRONIC EQUIPMENT ENGINEERING INTEGRATED CIRCUITS INTERFACES MANAGEMENT MATERIALS MATERIALS SCIENCE MEASURING METHODS MEMORY DEVICES MICROELECTRONIC CIRCUITS OPERATION PHYSICAL PROPERTIES SEMICONDUCTOR MATERIALS |
title | Metrology and Characterization Challenges for Emerging Research Materials and Devices |
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