Impact of Laser Radiation on Microhardness of a Semiconductor

It was found that strongly absorbed Nd:YAG laser radiation leads to a non-monotonous dependence of microhardness of p- and n-type Si crystals on laser radiation. This dependence is characterized by two maxima for p-Si and one maximum for n-Si crystals. In both cases the increase of microhardness at...

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Bibliographic Details
Published in:AIP conference proceedings 2012-11, Vol.1399 (1)
Main Authors: Medvid', A., Onufrijevs, P., Chiradze, G., Muktupavela, F.
Format: Article
Language:English
Subjects:
ATOMIC FORCE MICROSCOPY
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
ELECTROMAGNETIC RADIATION
ELEMENTS
HARDNESS
INTERSTITIALS
LASER RADIATION
LASERS
LAYERS
MATERIALS
MATERIALS SCIENCE
MECHANICAL PROPERTIES
MICROHARDNESS
MICROSCOPY
N-TYPE CONDUCTORS
NEODYMIUM LASERS
P-TYPE CONDUCTORS
PLASTICITY
POINT DEFECTS
RADIATIONS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SOLID STATE LASERS
SURFACES
TEMPERATURE GRADIENTS
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Summary:It was found that strongly absorbed Nd:YAG laser radiation leads to a non-monotonous dependence of microhardness of p- and n-type Si crystals on laser radiation. This dependence is characterized by two maxima for p-Si and one maximum for n-Si crystals. In both cases the increase of microhardness at higher laser intensity is explained by formation of mechanically compressed layer at the irradiated surface due to concentration of the interstitial atoms of Si at the surface in temperature gradient field. The decrease of the microhardness is explained by formation of nano-cones as a result of plastic deformation of the mechanically stressed layer. The additional maximum at lower laser intensity for p-Si crystal is explained by p-n type inversion of Si conductivity.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.3666315