Coulomb Interaction between InAs/GaAs Quantum Dots and Adjacent Impurities

Defects positioned close to a plane of quantum dots (QDs) are shown to be influenced by coulomb interaction effect when the quantum dots are charged by electrons. Signals from deep level transient spectroscopy (DLTS) measurement give rise to a mirror effect in the spectrum depending on movement of t...

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Bibliographic Details
Main Authors: Engstroem, O., Chalmers University of Technology, Kemivaegen 9, SE-412 96, Goeteborg, Kaniewska, M., Kaczmarczyk, M.
Format: Conference Proceeding
Language:English
Subjects:
ARSENIC COMPOUNDS
ARSENIDES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
COULOMB FIELD
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRIC FIELDS
ELECTRONS
ELEMENTARY PARTICLES
ENERGY LEVELS
EPITAXY
FERMI LEVEL
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERFACES
LEPTONS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
NANOSCIENCE AND NANOTECHNOLOGY
NANOSTRUCTURES
PNICTIDES
QUANTUM DOTS
SPECTROSCOPY
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Description
Summary:Defects positioned close to a plane of quantum dots (QDs) are shown to be influenced by coulomb interaction effect when the quantum dots are charged by electrons. Signals from deep level transient spectroscopy (DLTS) measurement give rise to a mirror effect in the spectrum depending on movement of the defect energy level in relation to the Fermi-level as a result of the electron traffic at the QDs.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.3666371