Photoluminescence Polarization Anisotropy in a Single Heterostructured III-V Nanowire with Mixed Crystal Phases

Low temperature (10 K) micro-photoluminescence ({mu}-PL) of single GaAs/AlGaAs core-shell nanowires with single GaAsSb inserts were measured. The PL emission from the zinc blende GaAsSb insert is strongly polarized along the nanowire axis while the PL emission from the wurtzite GaAs nanowire is perp...

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Bibliographic Details
Published in:AIP conference proceedings 2012-11, Vol.1399 (1)
Main Authors: Moses, A. F., Hoang, T. B., Ahtapodov, L., Dheeraj, D. L., Fimland, B. O., Weman, H., Helvoort, A. T. J. van
Format: Article
Language:English
Subjects:
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANISOTROPY
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CORRELATIONS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTALS
DIELECTRIC MATERIALS
ELECTRONIC STRUCTURE
EMISSION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INORGANIC PHOSPHORS
INTERFACES
LUMINESCENCE
MATERIALS
MOLECULAR BEAM EPITAXY
NANOSCIENCE AND NANOTECHNOLOGY
NANOSTRUCTURES
PHOSPHORS
PHOTOLUMINESCENCE
PHOTON EMISSION
PNICTIDES
POLARIZATION
QUANTUM WIRES
SELECTION RULES
SULFIDES
SULFUR COMPOUNDS
ZINC COMPOUNDS
ZINC SULFIDES
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Summary:Low temperature (10 K) micro-photoluminescence ({mu}-PL) of single GaAs/AlGaAs core-shell nanowires with single GaAsSb inserts were measured. The PL emission from the zinc blende GaAsSb insert is strongly polarized along the nanowire axis while the PL emission from the wurtzite GaAs nanowire is perpendiculary polarized to the nanowire axis. The result indicates that the crystal phase, through the optical selection rules, has significant effect on the polarization of the PL from NWs besides the dielectric mismatch. The analysis of the PL results based on the electronic structure of these nanowires supports the correlation between the crystal phase and the PL emission.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.3666502