Dual growth modes in ion bombarded Si surfaces

Morphological studies were done on Si (001) surfaces after rastering them with a 1 keV O{sub 2}{sup +} ion beam at an angle. The resulting mounded morphology was studied using atomic force microscopy (AFM) measurements. The roughness at different length scales were further extracted and quantified f...

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Bibliographic Details
Main Authors: Dhillon, Prabhjeet Kaur, Sarkar, Subhendu
Format: Conference Proceeding
Language:English
Subjects:
ATOMIC FORCE MICROSCOPY
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
CRYSTALS
EROSION
INTERFACES
ION BEAMS
IRRADIATION
MATERIALS SCIENCE
MORPHOLOGY
NANOSTRUCTURES
OXYGEN IONS
PHYSICAL RADIATION EFFECTS
ROUGHNESS
SEMICONDUCTOR MATERIALS
SILICON
SPECTRAL DENSITY
SPUTTERING
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Summary:Morphological studies were done on Si (001) surfaces after rastering them with a 1 keV O{sub 2}{sup +} ion beam at an angle. The resulting mounded morphology was studied using atomic force microscopy (AFM) measurements. The roughness at different length scales were further extracted and quantified from AFM measurements using scaling analysis. Results indicate two growth regimes of the evolving surface which were evident from the power spectral density (PSD) and interface width analysis of the eroded surfaces. Initially the growth is unstable followed by a stable regime of the nanostructures evolved after about 35 minutes of erosion. Temporal studies done on these surfaces show the onset of shadowing at higher sputtering times thus indicating the breakdown of the growth model at these times.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4710224