The influence of a doping profile on the characteristics of an ion-implanted GaAs field-effect transistor with a Schottky barrier

A GaAs field-effect ion-implanted transistor with a Schottky barrier is simulated. The doping profile obtained when doping through an insulator mask is determined and the dependences of the static transistor characteristics on the parameters of the doping profile are calculated and analyzed. The phy...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-12, Vol.45 (12), p.1589-1599
Main Authors: Shestakov, A. K., Zhuravlev, K. S.
Format: Article
Language:English
Subjects:
Analysis
Arsenic compounds
Epitaxy
FIELD EFFECT TRANSISTORS
Gallium arsenide
GALLIUM ARSENIDES
ION IMPLANTATION
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Physics
Physics and Astronomy
Physics of Semiconductor Devices
Semiconductor industry
SIMULATION
SUBSTRATES
Transistors
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Summary:A GaAs field-effect ion-implanted transistor with a Schottky barrier is simulated. The doping profile obtained when doping through an insulator mask is determined and the dependences of the static transistor characteristics on the parameters of the doping profile are calculated and analyzed. The physical processes controlling the transistor characteristics in the case of a variation in the parameters of its doping profile and the coefficient of compensation of the substrate are studied. Based on calculations, the optimal doping-profile parameters ensuring the best characteristics for transistors are predicted.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782611120128