Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

Laser heterostructures with an active region consisting of a highly strained GaInAs quantum well located between GaAsP compensating layers were grown by metal-organic chemical vapor deposition on GaAs substrates. Stripe mesa-structure laser diodes of 100 μm aperture emitting at 1190 nm were fabricat...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-09, Vol.45 (9), p.1227-1230
Main Authors: Vinokurov, D. A., Nikolaev, D. N., Pikhtin, N. A., Stankevich, A. L., Shamakhov, V. V., Bondarev, A. D., Rudova, N. A., Tarasov, I. S.
Format: Article
Language:English
Subjects:
APERTURES
CHEMICAL VAPOR DEPOSITION
Circuit components
EMISSION
GALLIUM ARSENIDES
LASERS
LAYERS
Magnetic Materials
Magnetism
MATERIALS SCIENCE
ORGANOMETALLIC COMPOUNDS
Physics
Physics and Astronomy
Physics of Semiconductor Devices
QUANTUM WELLS
Semiconductor lasers
SUBSTRATES
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Summary:Laser heterostructures with an active region consisting of a highly strained GaInAs quantum well located between GaAsP compensating layers were grown by metal-organic chemical vapor deposition on GaAs substrates. Stripe mesa-structure laser diodes of 100 μm aperture emitting at 1190 nm were fabricated. The highest emission power of these diodes in the CW mode amounted to 4.5 W per output mirror. Due to the presence of compensating GaAsP barriers, the GaInAs quantum well remains unrelaxed, which eliminates the spread in the maximum emission power of laser diodes produced from the same heterostructure.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782611090260