Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characteristics of Si-MOS structures with ultrathin oxide

Formation of centers of electron-hole pair generation near the silicon-oxide interface under field and thermal effects on Si-MOS structures with ultrathin oxide and poststress annihilation of these structures are studied. Concentrations of generation centers of minority charge carriers (holes) are d...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-07, Vol.45 (7), p.944-949
Main Authors: Goldman, E. I., Kukharskaya, N. F., Narishkina, V. G., Chucheva, G. V.
Format: Article
Language:English
Subjects:
Analysis
ANNIHILATION
CHARGE CARRIERS
Electrons
INTERFACES
LAYERS
Low-Dimensional Systems
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Physics
Physics and Astronomy
Quantum Phenomena
SEMICONDUCTOR MATERIALS
Semiconductor Structures
SILICON OXIDES
SURFACES
TEMPERATURE DEPENDENCE
THERMAL STRESSES
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Summary:Formation of centers of electron-hole pair generation near the silicon-oxide interface under field and thermal effects on Si-MOS structures with ultrathin oxide and poststress annihilation of these structures are studied. Concentrations of generation centers of minority charge carriers (holes) are determined from experimental dynamic current-voltage characteristics of Si-MOS diodes by fixing the accumulation duration of the equilibrium hole density near the surface separating the semiconductor and insulator during the sample transition from a deep depletion state to a pronounced inversion state. It is shown that MOS structures with ultrathin oxide are much more “pliable” to field and thermal stresses in comparison with samples with thick a insulating layer: objects with ultrathin oxide are more easily damaged by external stresses, but more rapidly recover to the initial state at room temperature.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782611070098