Electronic states on silicon surface after deposition and annealing of SiO{sub x} films

The spectrum of the photoconductivity induced by the polarization field of charges at surface states and traps in the film bulk has been analyzed to determine the energy band diagram at the c-Si-SiO{sub x} interface and the changes in the electronic states after the film annealing. It is found that...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-05, Vol.45 (5)
Main Authors: Vlasenko, N. A., Oleksenko, P. F., Denisova, Z. L., Sopinskii, N. V., Veligura, L. I., Gule, E. G., Litvin, O. S., Mukhlyo, M. A.
Format: Article
Language:English
Subjects:
ANNEALING
DEFECTS
DEPOSITION
ELECTRONIC STRUCTURE
ELECTRONS
INTERFACES
LAYERS
MATERIALS SCIENCE
NANOSTRUCTURES
OXYGEN
PEAKS
PHOTOCONDUCTIVITY
PHOTOLUMINESCENCE
SILICON
SILICON OXIDES
SPECTRA
SURFACES
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Summary:The spectrum of the photoconductivity induced by the polarization field of charges at surface states and traps in the film bulk has been analyzed to determine the energy band diagram at the c-Si-SiO{sub x} interface and the changes in the electronic states after the film annealing. It is found that the energy bands are bent at the Si-SiO{sub x} interface and the Si surface is enriched in electrons. In equilibrium the photocurrent peak at 1.1 eV is due to the band-to-band transitions in the silicon part of the interface. Annealing shifts the peak to higher energies; this shift increases with an increase in the annealing temperature from 650 to 1000 Degree-Sign C. This effect is accompanied by a decrease in the photocurrent at {
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782611050289