Study of the processes of carbonization and oxidation of porous silicon by Raman and IR spectroscopy

Porous silicon layers were produced by electrochemical etching of single-crystal silicon wafers with the resistivity 10 Ω cm in the aqueous-alcohol solution of hydrofluoric acid. Raman spectroscopy and infrared absorption spectroscopy are used to study the processes of interaction of porous silicon...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-03, Vol.45 (3), p.350-354
Main Authors: Vasin, A. V., Okholin, P. N., Verovsky, I. N., Nazarov, A. N., Lysenko, V. S., Kholostov, K. I., Bondarenko, V. P., Ishikawa, Y.
Format: Article
Language:English
Subjects:
ABSORPTION SPECTROSCOPY
ACETYLENE
CARBONIZATION
Chemical properties
Composite Semiconductors
CONDENSATES
Electric properties
ELECTROCHEMISTRY
Fluorine compounds
GRAPHITE
HYDROFLUORIC ACID
INFRARED SPECTRA
INTERACTIONS
LAYERS
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Microcrystalline
MONOCRYSTALS
Nanocrystalline
OXIDATION
Oxidation-reduction reaction
PHOTOLUMINESCENCE
Physics
Physics and Astronomy
Porous
POROUS MATERIALS
RAMAN SPECTROSCOPY
SILICON
Spectrum analysis
SURFACES
WATER VAPOR
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Summary:Porous silicon layers were produced by electrochemical etching of single-crystal silicon wafers with the resistivity 10 Ω cm in the aqueous-alcohol solution of hydrofluoric acid. Raman spectroscopy and infrared absorption spectroscopy are used to study the processes of interaction of porous silicon with undiluted acetylene at low temperatures and the processes of oxidation of carbonized porous silicon by water vapors. It is established that, even at the temperature 550°C, the silicon-carbon bonds are formed at the pore surface and the graphite-like carbon condensate emerges. It is shown that the carbon condensate inhibits oxidation of porous silicon by water vapors and contributes to quenching of white photoluminescence in the oxidized carbonized porous silicon nanocomposite layer.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782611030249