Manifestation of light and heavy electrons in the galvanomagnetic characteristics of Te-doped n-Bi{sub 0.88}Sb{sub 0.12} single crystals

The components of resistivity ({rho}{sub ij}), Hall coefficient (R{sub ijk}), and magnetoresistance ({rho}{sub ij,kl}) of n-Bi{sub 0.88}Sb{sub 0.12} single crystals doped with tellurium to 0.01, 0.1, and 0.2 at % have been measured in the temperature range of 77-300 K. It is concluded that light and...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-02, Vol.45 (2)
Main Authors: Tairov, B. A., Ibragimova, O. I., Rahimov, A. H., Brazis, R.
Format: Article
Language:English
Subjects:
DOPED MATERIALS
ELECTRON MOBILITY
MAGNETORESISTANCE
MATERIALS SCIENCE
MONOCRYSTALS
TELLURIUM
TEMPERATURE RANGE
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Summary:The components of resistivity ({rho}{sub ij}), Hall coefficient (R{sub ijk}), and magnetoresistance ({rho}{sub ij,kl}) of n-Bi{sub 0.88}Sb{sub 0.12} single crystals doped with tellurium to 0.01, 0.1, and 0.2 at % have been measured in the temperature range of 77-300 K. It is concluded that light and heavy electrons are involved in transport processes. The energy spacing between the bands of light and heavy electrons is found to be 40 meV, and the ratios of the effective masses and electron mobilities are estimated as m{sub 2}*/m{sub l}* = 3 and b Almost-Equal-To 0.16, respectively.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782611020217