Influence of dislocations on the process of pore formation in n-InP (111) single crystals

Using scanning electron microscopy, the influence of dislocations on the mechanism of pore formation during electrolytic etching of single-crystal InP is shown. During studying of the nanostructure of porous layers, the features of mechanisms of pore formation in the n -InP samples are established....

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2011-01, Vol.45 (1), p.121-124
Main Authors: Suchikova, Y. A., Kidalov, V. V., Sukach, G. A.
Format: Article
Language:English
Subjects:
Composite Semiconductors
DISLOCATIONS
IMPURITIES
LAYERS
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Microcrystalline
MONOCRYSTALS
Nanocrystalline
NANOSTRUCTURES
Optoelectronics industry
Physics
Physics and Astronomy
Porous
POROUS MATERIALS
SCANNING ELECTRON MICROSCOPY
SURFACES
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Summary:Using scanning electron microscopy, the influence of dislocations on the mechanism of pore formation during electrolytic etching of single-crystal InP is shown. During studying of the nanostructure of porous layers, the features of mechanisms of pore formation in the n -InP samples are established. It is shown that they are caused by outcrop of dislocations on the (111) surface and pore growth both along the surface and perpendicularly to it. The dislocation density in the places of an increased impurity concentration is calculated.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782611010192