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High-power laser diodes of wavelength 808 nm based on various types of asymmetric heterostructures with an ultrawide waveguide

The parameters of high-power multimode laser diodes featuring a radiation wavelength of 808 nm obtained on the basis of asymmetric heterostructures with an ultrawide waveguide in the systems of AlGaAs/GaAs and (Al)GaInP/GaInAsP/GaAs are compared. In the lasers based on an AlGaAs/GaAs system, the max...

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Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2008-03, Vol.42 (3), p.350-353
Main Authors: Bezotosnyĭ, V. V., Vasil’eva, V. V., Vinokurov, D. A., Kapitonov, V. A., Krokhin, O. N., Leshko, A. Yu, Lyutetskiĭ, A. V., Murashova, A. V., Nalet, T. A., Nikolaev, D. N., Pikhtin, N. A., Popov, Yu. M., Slipchenko, S. O., Stankevich, A. L., Fetisova, N. V., Shamakhov, V. V., Tarasov, I. S.
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Language:English
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Summary:The parameters of high-power multimode laser diodes featuring a radiation wavelength of 808 nm obtained on the basis of asymmetric heterostructures with an ultrawide waveguide in the systems of AlGaAs/GaAs and (Al)GaInP/GaInAsP/GaAs are compared. In the lasers based on an AlGaAs/GaAs system, the maximum optical power was limited by optical degradation of the SiO 2 /Si mirrors and amounted to 4.7 W. In the lasers based on an (Al)GaInP/GaInAsP/GaAs system, the maximum optical power was limited by thermal saturation and equaled 7 W. The obtained results show that the (Al)GaInP/GaInAsP/GaAs system is more reliable from the standpoint of an increase in both the maximum optical power and operation life of lasers.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782608030202