Variation in optical-absorption edge in SiN{sub x} layers with silicon clusters

Using optical methods, data on optical constants are obtained for silicon nitride films synthesized by plasma-chemical vapor deposition (PCVD). Models for calculating the permittivity in the model of inhomogeneous phase mixture of silicon and silicon nitride are considered. It is found that the opti...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2008-02, Vol.42 (2)
Main Authors: Efremov, M. D., Volodin, V. A., Marin, D. V., Arzhannikova, S. A., Kamaev, G. N., Kochubei, S. A., Popov, A. A.
Format: Article
Language:English
Subjects:
ABSORPTION
CHEMICAL VAPOR DEPOSITION
LAYERS
LIGHT TRANSMISSION
MATERIALS SCIENCE
NITROGEN
PEAKS
PERMITTIVITY
PHOTOLUMINESCENCE
PLASMA
RAMAN EFFECT
SILICON
SILICON NITRIDES
STOICHIOMETRY
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Using optical methods, data on optical constants are obtained for silicon nitride films synthesized by plasma-chemical vapor deposition (PCVD). Models for calculating the permittivity in the model of inhomogeneous phase mixture of silicon and silicon nitride are considered. It is found that the optical-absorption edge (E{sub g}) and the photoluminescence peak shift to longer wavelengths with increasing nitrogen atomic fraction x in sin{sub x} films. When x approaches the value 4/3 characteristic for stoichiometric silicon nitride Si{sub 3}N{sub 4}, a nonlinear sharp increase in E{sub g} is observed. Using Raman scattering, Si-Si bonds are revealed, which confirms the direct formation of silicon clusters during the film deposition. The relation between the composition of nonstoichiometric silicon nitride films, values of permittivity, and the optical-band width is established for light transmission.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782608020152