Relaxation dynamics and residual strain in metamorphic AlSb on GaAs

We have observed the evolution of the accumulated stress during heteroepitaxial growth of highly lattice mismatched AlSb on GaAs by measuring the deformation of the substrate as a function of time. High resolution transmission electron microscopy images show almost all of the plastic relaxation is a...

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Bibliographic Details
Published in:Applied physics letters 2012-01, Vol.100 (1), p.012103-012103-4
Main Authors: Ripalda, J. M., Sanchez, A. M., Taboada, A. G., Rivera, A., Alén, B., González, Y., González, L., Briones, F., Rotter, T. J., Balakrishnan, G.
Format: Article
Language:English
Subjects:
ALUMINIUM COMPOUNDS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEFORMATION
DISLOCATIONS
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
INTERFACES
LATTICE PARAMETERS
LAYERS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
PLASTICITY
RELAXATION
RESIDUAL STRESSES
RESOLUTION
SEMICONDUCTOR MATERIALS
STRAINS
SUBSTRATES
TIME DEPENDENCE
TRANSMISSION ELECTRON MICROSCOPY
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Summary:We have observed the evolution of the accumulated stress during heteroepitaxial growth of highly lattice mismatched AlSb on GaAs by measuring the deformation of the substrate as a function of time. High resolution transmission electron microscopy images show almost all of the plastic relaxation is accommodated by an array of 90° misfit dislocations at the interface. The in-plane lattice parameter of the resulting metamorphic AlSb is slightly smaller (0.3%) than the bulk value and perfectly matches the lattice parameter of bulk GaSb. It is, therefore, possible to grow nearly stress-free GaSb on GaAs using a metamorphic AlSb buffer layer.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3674986