Carrier mobility measurement across a single grain boundary in polycrystalline silicon using an organic gate thin-film transistor

In this study, we developed a measurement method for field-effect-carrier mobility across a single grain boundary in polycrystalline Si (poly Si) used for solar cell production by using an organic gate field-effect transistor (FET). To prevent precipitation and the diffusion of impurities affecting...

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Bibliographic Details
Published in:Applied physics letters 2012-01, Vol.100 (2), p.023504-023504-3
Main Authors: Hashimoto, Masaki, Kanomata, Kensaku, Momiyama, Katsuaki, Kubota, Shigeru, Hirose, Fumihiko
Format: Article
Language:English
Subjects:
CARRIER MOBILITY
CHARGE CARRIERS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIFFUSION
ELECTRIC CONDUCTIVITY
EV RANGE
FABRICATION
FIELD EFFECT TRANSISTORS
GRAIN BOUNDARIES
MATERIALS SCIENCE
ORGANIC SEMICONDUCTORS
POLYCRYSTALS
PRECIPITATION
SILICON
SILICON SOLAR CELLS
TEMPERATURE DEPENDENCE
THIN FILMS
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Summary:In this study, we developed a measurement method for field-effect-carrier mobility across a single grain boundary in polycrystalline Si (poly Si) used for solar cell production by using an organic gate field-effect transistor (FET). To prevent precipitation and the diffusion of impurities affecting the electronic characteristics of the grain boundary, all the processing temperatures during FET fabrication were held below 150°C. From the grain boundary, the field-effect mobility was measured at around 21.4 cm 2 /Vs at 297K, and the temperature dependence of the field-effect mobility suggested the presence of a potential barrier of 0.22eV at the boundary. The technique presented here is applicable for the monitoring of carrier conduction characteristics at the grain boundary in poly Si used for the production of solar cells.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3675863