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Magnetic and electronic properties of the interface between half metallic Fe{sub 3}O{sub 4} and semiconducting ZnO

We have investigated the magnetic depth profile of an epitaxial Fe{sub 3}O{sub 4} thin film grown directly on a semiconducting ZnO substrate by soft x-ray resonant magnetic reflectometry (XRMR) and electron energy loss spectroscopy (EELS). Consistent chemical profiles at the interface between ZnO an...

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Bibliographic Details
Published in:Applied physics letters 2012-02, Vol.100 (8)
Main Authors: Brueck, S., Australian Nuclear Science and Technology Organization, New Illawarra Rd., Menai NSW 2232, Physikalisches Institut and Roentgen Research Center for Complex Material Systems, Universitaet Wuerzburg, 97074 Wuerzburg, Paul, M., Mueller, A., Kufer, D., Praetorius, C., Fauth, K., Sing, M., Claessen, R., Tian, H., Verbeeck, J., Van Tendeloo, G., Audehm, P., Goering, E.
Format: Article
Language:English
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Summary:We have investigated the magnetic depth profile of an epitaxial Fe{sub 3}O{sub 4} thin film grown directly on a semiconducting ZnO substrate by soft x-ray resonant magnetic reflectometry (XRMR) and electron energy loss spectroscopy (EELS). Consistent chemical profiles at the interface between ZnO and Fe{sub 3}O{sub 4} are found from both methods. Valence selective EELS and XRMR reveal independently that the first monolayer of Fe at the interface between ZnO and Fe{sub 3}O{sub 4} contains only Fe{sup 3+} ions. Besides this narrow 2.5 A interface layer, Fe{sub 3}O{sub 4} shows magnetic bulk properties throughout the whole film making highly efficient spin injection in this system feasible.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3687731