Coincident site lattice-matched InGaN on (111) spinel substrates

Coincident site lattice-matched wurtzite (0001) In{sub 0.31}Ga{sub 0.69}N, emitting in the important green wavelength region, is demonstrated by molecular beam epitaxy on a cubic (111) MgAl{sub 2}O{sub 4} spinel substrate. The coincident site lattice matching condition involves a 30 deg. rotation be...

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Bibliographic Details
Published in:Applied physics letters 2012-04, Vol.100 (15)
Main Authors: Norman, A. G., Dippo, P. C., Moutinho, H. R., Simon, J., Ptak, A. J.
Format: Article
Language:English
Subjects:
ALUMINATES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
CUBIC LATTICES
DISLOCATIONS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LAYERS
LIGHT EMITTING DIODES
MAGNESIUM COMPOUNDS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SOLIDS
SPINELS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
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Summary:Coincident site lattice-matched wurtzite (0001) In{sub 0.31}Ga{sub 0.69}N, emitting in the important green wavelength region, is demonstrated by molecular beam epitaxy on a cubic (111) MgAl{sub 2}O{sub 4} spinel substrate. The coincident site lattice matching condition involves a 30 deg. rotation between the lattice of the InGaN epitaxial layer and the lattice of the spinel. This work describes an alternative approach towards realizing more compositionally homogenous InGaN films with low dislocation density emitting in the ''green gap'' of low efficiency currently observed for semiconductor light emitting diodes (LEDs). This approach could lead to higher efficiency green LEDs presently of great interest for solid-state lighting applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3702577