Crystallization mechanisms and recording characteristics of Si/CuSi bilayer for write-once blu-ray disc

The crystallization mechanisms of Si/CuSi bilayer and its recording characteristics for write-once blu-ray disc (BD-R) were investigated. It was found that Cu 3 Si phase appeared during the room temperature sputtered deposition. Then, the Si atoms in CuSi layer segregated and crystallized to cubic S...

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Bibliographic Details
Published in:Applied physics letters 2011-09, Vol.99 (12), p.121908-121908-3
Main Authors: Ou, Sin-Liang, Kuo, Po-Cheng, Chen, Sheng-Chi, Tsai, Tsung-Lin, Yeh, Chin-Yen, Chang, Han-Feng, Lee, Chao-Te, Chiang, Donyau
Format: Article
Language:English
Subjects:
ANNEALING
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
COPPER SILICIDES
CRYSTALLIZATION
CUBIC LATTICES
DEPOSITION
GRAIN SIZE
HEATING
INTERFACES
LAYERS
MATERIALS SCIENCE
NUCLEATION
SILICON
SPUTTERING
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
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Summary:The crystallization mechanisms of Si/CuSi bilayer and its recording characteristics for write-once blu-ray disc (BD-R) were investigated. It was found that Cu 3 Si phase appeared during the room temperature sputtered deposition. Then, the Si atoms in CuSi layer segregated and crystallized to cubic Si in Cu 3 Si nucleation sites as the film was annealed at 270°C. After heating to 500°C, the grains size of cubic Si phase grew and the hexagonal Si phase was observed. The dynamic tests show that the Si/CuSi bilayer has great feasibility for 1-4× BD-R with the bottom jitter values below 6.5%.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3641417