Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence....

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Bibliographic Details
Published in:Applied physics letters 2011-09, Vol.99 (13), p.131108-131108-3
Main Authors: Albert, S., Bengoechea-Encabo, A., Lefebvre, P., Sanchez-Garcia, M. A., Calleja, E., Jahn, U., Trampert, A.
Format: Article
Language:English
Subjects:
Condensed Matter
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
GALLIUM NITRIDES
INDIUM COMPOUNDS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
MORPHOLOGY
NANOSCIENCE AND NANOTECHNOLOGY
NANOSTRUCTURES
PHOTOLUMINESCENCE
Physics
PLASMA
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE GRADIENTS
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Summary:This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650°C, an increase in In incorporation for decreasing temperature is observed. This effect allows tailoring the InGaN nanocolumns emission line shape by using temperature gradients during growth. Depending on the gradient rate, span, and sign, broad emission line shapes are obtained, covering the yellow to green range, even yielding white emission.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3644986