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Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates
This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence....
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Published in: | Applied physics letters 2011-09, Vol.99 (13), p.131108-131108-3 |
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container_end_page | 131108-3 |
container_issue | 13 |
container_start_page | 131108 |
container_title | Applied physics letters |
container_volume | 99 |
creator | Albert, S. Bengoechea-Encabo, A. Lefebvre, P. Sanchez-Garcia, M. A. Calleja, E. Jahn, U. Trampert, A. |
description | This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650°C, an increase in In incorporation for decreasing temperature is observed. This effect allows tailoring the InGaN nanocolumns emission line shape by using temperature gradients during growth. Depending on the gradient rate, span, and sign, broad emission line shapes are obtained, covering the yellow to green range, even yielding white emission. |
doi_str_mv | 10.1063/1.3644986 |
format | article |
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A.</creatorcontrib><creatorcontrib>Calleja, E.</creatorcontrib><creatorcontrib>Jahn, U.</creatorcontrib><creatorcontrib>Trampert, A.</creatorcontrib><title>Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates</title><title>Applied physics letters</title><description>This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650°C, an increase in In incorporation for decreasing temperature is observed. This effect allows tailoring the InGaN nanocolumns emission line shape by using temperature gradients during growth. Depending on the gradient rate, span, and sign, broad emission line shapes are obtained, covering the yellow to green range, even yielding white emission.</description><subject>Condensed Matter</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CRYSTAL GROWTH</subject><subject>GALLIUM NITRIDES</subject><subject>INDIUM COMPOUNDS</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>MORPHOLOGY</subject><subject>NANOSCIENCE AND NANOTECHNOLOGY</subject><subject>NANOSTRUCTURES</subject><subject>PHOTOLUMINESCENCE</subject><subject>Physics</subject><subject>PLASMA</subject><subject>SCANNING ELECTRON MICROSCOPY</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SILICON</subject><subject>SUBSTRATES</subject><subject>TEMPERATURE DEPENDENCE</subject><subject>TEMPERATURE GRADIENTS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp1kLFOwzAQhi0EEqUw8AaWWGAI-OLETgaGqoK2UgUDMDFYjmtTo8SubBfo25OqBSam052-_073IXQO5BoIozdwTVlR1BU7QAMgnGcUoDpEA0IIzVhdwjE6ifG9b8uc0gF6vetsjNY7rLxLwbfYGzxzE_mAnXRe-XbduYjfgv90uNngzrdarVsZskbLDuuVTfJrg_v8k70EgCsc101MQSYdT9GRkW3UZ_s6RC_3d8_jaTZ_nMzGo3mmioKljCsoK1lKxbTKWWEIrZWGipumVg0s6rqoTGPKpqyJAZYTliu1qGBRaEo55BUdoovdXh-TFVHZpNWyf8dplUSek5zzkvTU1Y5aylasgu1k2AgvrZiO5mI7I70_AMY_4I9VwccYtPkNABFbzwLE3nPP3u7Y7WGZepX_wz-yxV628IZ-A-MugyM</recordid><startdate>20110926</startdate><enddate>20110926</enddate><creator>Albert, S.</creator><creator>Bengoechea-Encabo, A.</creator><creator>Lefebvre, P.</creator><creator>Sanchez-Garcia, M. 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A.</au><au>Calleja, E.</au><au>Jahn, U.</au><au>Trampert, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates</atitle><jtitle>Applied physics letters</jtitle><date>2011-09-26</date><risdate>2011</risdate><volume>99</volume><issue>13</issue><spage>131108</spage><epage>131108-3</epage><pages>131108-131108-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650°C, an increase in In incorporation for decreasing temperature is observed. 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source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); American Institute of Physics |
subjects | Condensed Matter CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL GROWTH GALLIUM NITRIDES INDIUM COMPOUNDS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY MORPHOLOGY NANOSCIENCE AND NANOTECHNOLOGY NANOSTRUCTURES PHOTOLUMINESCENCE Physics PLASMA SCANNING ELECTRON MICROSCOPY SEMICONDUCTOR MATERIALS SILICON SUBSTRATES TEMPERATURE DEPENDENCE TEMPERATURE GRADIENTS |
title | Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates |
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