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Electrical properties of atomic layer deposited aluminum oxide on gallium nitride
We report on our investigation of the electrical properties of metal/Al 2 O 3 /GaN metal-insulator-semiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposit...
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| Published in: | Applied physics letters 2011-09, Vol.99 (13), p.133503-133503-3 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c413t-56d4b2e6f8418a19ce5ea6f1b22ac2dd0b55f9b9e9847118ff509d4d20b11b693 |
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| cites | cdi_FETCH-LOGICAL-c413t-56d4b2e6f8418a19ce5ea6f1b22ac2dd0b55f9b9e9847118ff509d4d20b11b693 |
| container_end_page | 133503-3 |
| container_issue | 13 |
| container_start_page | 133503 |
| container_title | Applied physics letters |
| container_volume | 99 |
| creator | Esposto, Michele Krishnamoorthy, Sriram Nath, Digbijoy N. Bajaj, Sanyam Hung, Ting-Hsiang Rajan, Siddharth |
| description | We report on our investigation of the electrical properties of metal/Al
2
O
3
/GaN metal-insulator-semiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposited Al
2
O
3
films on GaN substrates. The conduction band offset at the Al
2
O
3
/GaN interface was calculated to be 2.13eV, in agreement with theoretical predications. A non-zero field of 0.93 MV/cm in the oxide under flat-band conditions in the GaN was inferred, which we attribute to a fixed net positive charge density of magnitude 4.60×10
12
cm
−2
at the Al
2
O
3
/GaN interface. We provide hypotheses to explain the origin of this charge by analyzing the energy band line-up. |
| doi_str_mv | 10.1063/1.3645616 |
| format | article |
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2
O
3
/GaN metal-insulator-semiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposited Al
2
O
3
films on GaN substrates. The conduction band offset at the Al
2
O
3
/GaN interface was calculated to be 2.13eV, in agreement with theoretical predications. A non-zero field of 0.93 MV/cm in the oxide under flat-band conditions in the GaN was inferred, which we attribute to a fixed net positive charge density of magnitude 4.60×10
12
cm
−2
at the Al
2
O
3
/GaN interface. We provide hypotheses to explain the origin of this charge by analyzing the energy band line-up.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3645616</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>ALUMINIUM OXIDES ; CAPACITANCE ; CAPACITORS ; CHARGE DENSITY ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; DEPOSITION ; ELECTRIC CONDUCTIVITY ; ELECTRONIC STRUCTURE ; GALLIUM NITRIDES ; INTERFACES ; LAYERS ; MATERIALS SCIENCE ; MOLECULAR BEAM EPITAXY ; NICKEL ; SEMICONDUCTOR MATERIALS ; SUBSTRATES</subject><ispartof>Applied physics letters, 2011-09, Vol.99 (13), p.133503-133503-3</ispartof><rights>2011 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c413t-56d4b2e6f8418a19ce5ea6f1b22ac2dd0b55f9b9e9847118ff509d4d20b11b693</citedby><cites>FETCH-LOGICAL-c413t-56d4b2e6f8418a19ce5ea6f1b22ac2dd0b55f9b9e9847118ff509d4d20b11b693</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3645616$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,782,784,795,885,27924,27925,76383</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22027757$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Esposto, Michele</creatorcontrib><creatorcontrib>Krishnamoorthy, Sriram</creatorcontrib><creatorcontrib>Nath, Digbijoy N.</creatorcontrib><creatorcontrib>Bajaj, Sanyam</creatorcontrib><creatorcontrib>Hung, Ting-Hsiang</creatorcontrib><creatorcontrib>Rajan, Siddharth</creatorcontrib><title>Electrical properties of atomic layer deposited aluminum oxide on gallium nitride</title><title>Applied physics letters</title><description>We report on our investigation of the electrical properties of metal/Al
2
O
3
/GaN metal-insulator-semiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposited Al
2
O
3
films on GaN substrates. The conduction band offset at the Al
2
O
3
/GaN interface was calculated to be 2.13eV, in agreement with theoretical predications. A non-zero field of 0.93 MV/cm in the oxide under flat-band conditions in the GaN was inferred, which we attribute to a fixed net positive charge density of magnitude 4.60×10
12
cm
−2
at the Al
2
O
3
/GaN interface. We provide hypotheses to explain the origin of this charge by analyzing the energy band line-up.</description><subject>ALUMINIUM OXIDES</subject><subject>CAPACITANCE</subject><subject>CAPACITORS</subject><subject>CHARGE DENSITY</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>DEPOSITION</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>ELECTRONIC STRUCTURE</subject><subject>GALLIUM NITRIDES</subject><subject>INTERFACES</subject><subject>LAYERS</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>NICKEL</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SUBSTRATES</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQhoMoWKsH_0HAk4etmWST3b0IUloVCiLoOWTzoZHdzZJswf57U1r05GmY4eFl3gehayALIILdwYKJkgsQJ2gGpKoKBlCfohkhhBWi4XCOLlL6yiunjM3Q66qzeopeqw6PMYw2Tt4mHBxWU-i9xp3a2YiNHUPykzVYddveD9seh29vLA4D_lBd5_Nh8DnH2Et05lSX7NVxztH7evW2fCo2L4_Py4dNoUtgU8GFKVtqhatLqBU02nKrhIOWUqWpMaTl3DVtY5u6rHIH5zhpTGkoaQFa0bA5ujnkhjR5mXT-Tn_qMAy5j6SU0KriVaZuD5SOIaVonRyj71XcSSByb0yCPBrL7P2B3YepyYfhf_hPm_zVxn4AYFdzog</recordid><startdate>20110926</startdate><enddate>20110926</enddate><creator>Esposto, Michele</creator><creator>Krishnamoorthy, Sriram</creator><creator>Nath, Digbijoy N.</creator><creator>Bajaj, Sanyam</creator><creator>Hung, Ting-Hsiang</creator><creator>Rajan, Siddharth</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20110926</creationdate><title>Electrical properties of atomic layer deposited aluminum oxide on gallium nitride</title><author>Esposto, Michele ; Krishnamoorthy, Sriram ; Nath, Digbijoy N. ; Bajaj, Sanyam ; Hung, Ting-Hsiang ; Rajan, Siddharth</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c413t-56d4b2e6f8418a19ce5ea6f1b22ac2dd0b55f9b9e9847118ff509d4d20b11b693</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>ALUMINIUM OXIDES</topic><topic>CAPACITANCE</topic><topic>CAPACITORS</topic><topic>CHARGE DENSITY</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>DEPOSITION</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>ELECTRONIC STRUCTURE</topic><topic>GALLIUM NITRIDES</topic><topic>INTERFACES</topic><topic>LAYERS</topic><topic>MATERIALS SCIENCE</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>NICKEL</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SUBSTRATES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Esposto, Michele</creatorcontrib><creatorcontrib>Krishnamoorthy, Sriram</creatorcontrib><creatorcontrib>Nath, Digbijoy N.</creatorcontrib><creatorcontrib>Bajaj, Sanyam</creatorcontrib><creatorcontrib>Hung, Ting-Hsiang</creatorcontrib><creatorcontrib>Rajan, Siddharth</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Esposto, Michele</au><au>Krishnamoorthy, Sriram</au><au>Nath, Digbijoy N.</au><au>Bajaj, Sanyam</au><au>Hung, Ting-Hsiang</au><au>Rajan, Siddharth</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical properties of atomic layer deposited aluminum oxide on gallium nitride</atitle><jtitle>Applied physics letters</jtitle><date>2011-09-26</date><risdate>2011</risdate><volume>99</volume><issue>13</issue><spage>133503</spage><epage>133503-3</epage><pages>133503-133503-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report on our investigation of the electrical properties of metal/Al
2
O
3
/GaN metal-insulator-semiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposited Al
2
O
3
films on GaN substrates. The conduction band offset at the Al
2
O
3
/GaN interface was calculated to be 2.13eV, in agreement with theoretical predications. A non-zero field of 0.93 MV/cm in the oxide under flat-band conditions in the GaN was inferred, which we attribute to a fixed net positive charge density of magnitude 4.60×10
12
cm
−2
at the Al
2
O
3
/GaN interface. We provide hypotheses to explain the origin of this charge by analyzing the energy band line-up.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.3645616</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2011-09, Vol.99 (13), p.133503-133503-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_22027757 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP_美国物理联合会现刊（与NSTL共建） |
| subjects | ALUMINIUM OXIDES CAPACITANCE CAPACITORS CHARGE DENSITY CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DEPOSITION ELECTRIC CONDUCTIVITY ELECTRONIC STRUCTURE GALLIUM NITRIDES INTERFACES LAYERS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY NICKEL SEMICONDUCTOR MATERIALS SUBSTRATES |
| title | Electrical properties of atomic layer deposited aluminum oxide on gallium nitride |
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