Temperature-dependent energy band gap variation in self-organized InAs quantum dots

We investigated the temperature-dependent variation of the photoluminescence emission energy of self-organized InAs/GaAs quantum dots (QDs) grown by conventional Stranski-Krastanov (SK) molecular beam epitaxy and migration-enhanced molecular beam epitaxy (MEMBE) and that of MEMBE InAs QDs in a symme...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2011-10, Vol.99 (15), p.151909-151909-3
Main Authors: Yeo, Inah, Dong Song, Jin, Lee, Jungil
Format: Article
Language:English
Subjects:
ASYMMETRY
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
ELECTRONIC STRUCTURE
ENERGY GAP
GALLIUM ARSENIDES
INDIUM ARSENIDES
INTERFACES
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
NANOSCIENCE AND NANOTECHNOLOGY
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
VARIATIONS
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We investigated the temperature-dependent variation of the photoluminescence emission energy of self-organized InAs/GaAs quantum dots (QDs) grown by conventional Stranski-Krastanov (SK) molecular beam epitaxy and migration-enhanced molecular beam epitaxy (MEMBE) and that of MEMBE InAs QDs in a symmetric and an asymmetric In 0.2 G a 0.8 As/ Ga As well. The temperature-dependent energy variation of each QD is analyzed in low and high temperature regions, including a sigmoidal behavior of conventional SK quantum dots with the well-known Varshni and semi-empirical Fan models.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3651492