Demonstration of forward inter-band tunneling in GaN by polarization engineering

We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153mA/cm 2 at 10mV, and 17.7A/cm 2 peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diode...

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Bibliographic Details
Published in:Applied physics letters 2011-12, Vol.99 (23), p.233504-233504-3
Main Authors: Krishnamoorthy, Sriram, Park, Pil Sung, Rajan, Siddharth
Format: Article
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
CURRENT DENSITY
ELECTRIC CURRENTS
ELECTRONIC STRUCTURE
GALLIUM NITRIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INTERFACES
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
PLASMA
POLARIZATION
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SUPERCONDUCTING JUNCTIONS
TEMPERATURE RANGE 0273-0400 K
TUNNEL DIODES
TUNNEL EFFECT
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Summary:We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153mA/cm 2 at 10mV, and 17.7A/cm 2 peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio of 4 at room temperature. The forward current density achieved in this work meets the typical current drive requirements of a multi-junction solar cell.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3666862