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Demonstration of forward inter-band tunneling in GaN by polarization engineering
We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153mA/cm 2 at 10mV, and 17.7A/cm 2 peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diode...
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Published in: | Applied physics letters 2011-12, Vol.99 (23), p.233504-233504-3 |
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cited_by | cdi_FETCH-LOGICAL-c413t-b77d958329b8754eb4cbcf797148aef7858574b149eddbcbeb744cb85e997db03 |
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container_end_page | 233504-3 |
container_issue | 23 |
container_start_page | 233504 |
container_title | Applied physics letters |
container_volume | 99 |
creator | Krishnamoorthy, Sriram Park, Pil Sung Rajan, Siddharth |
description | We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153mA/cm
2
at 10mV, and 17.7A/cm
2
peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio of 4 at room temperature. The forward current density achieved in this work meets the typical current drive requirements of a multi-junction solar cell. |
doi_str_mv | 10.1063/1.3666862 |
format | article |
fullrecord | <record><control><sourceid>scitation_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22027840</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c413t-b77d958329b8754eb4cbcf797148aef7858574b149eddbcbeb744cb85e997db03</originalsourceid><addsrcrecordid>eNp1kMFOAyEQhonRxLV68A028eRhKyywsBcTU7WaNOpBzwRYqJgWGsCY-vRStxcPniYz-ebPzAfAOYJTBDt8haa46zretQegQpCxBiPED0EFIcRN11N0DE5S-igtbTGuwMutWQefcpTZBV8HW9sQv2QcaueziY2Sfqjzp_dm5fyyDOu5fKrVtt6ElYzue1wzfum8MbEgp-DIylUyZ_s6AW_3d6-zh2bxPH-c3SwaTRDOjWJs6CnHba84o8QoopW2rGeIcGks45RTRhQivRkGpZVRjBSEU9P3bFAQT8DFmBtSdiJpl41-16EcqrNoW9gyTnbU5UjpGFKKxopNdGsZtwJBsRMmkNgLK-z1yO7Cfv_6H_5jTQQrijX8A83Vc4Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Demonstration of forward inter-band tunneling in GaN by polarization engineering</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>American Institute of Physics</source><creator>Krishnamoorthy, Sriram ; Park, Pil Sung ; Rajan, Siddharth</creator><creatorcontrib>Krishnamoorthy, Sriram ; Park, Pil Sung ; Rajan, Siddharth</creatorcontrib><description>We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153mA/cm
2
at 10mV, and 17.7A/cm
2
peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio of 4 at room temperature. The forward current density achieved in this work meets the typical current drive requirements of a multi-junction solar cell.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3666862</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CRYSTAL GROWTH ; CURRENT DENSITY ; ELECTRIC CURRENTS ; ELECTRONIC STRUCTURE ; GALLIUM NITRIDES ; HETEROJUNCTIONS ; INDIUM COMPOUNDS ; INTERFACES ; MATERIALS SCIENCE ; MOLECULAR BEAM EPITAXY ; PLASMA ; POLARIZATION ; SEMICONDUCTOR MATERIALS ; SOLAR CELLS ; SUPERCONDUCTING JUNCTIONS ; TEMPERATURE RANGE 0273-0400 K ; TUNNEL DIODES ; TUNNEL EFFECT</subject><ispartof>Applied physics letters, 2011-12, Vol.99 (23), p.233504-233504-3</ispartof><rights>2011 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c413t-b77d958329b8754eb4cbcf797148aef7858574b149eddbcbeb744cb85e997db03</citedby><cites>FETCH-LOGICAL-c413t-b77d958329b8754eb4cbcf797148aef7858574b149eddbcbeb744cb85e997db03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3666862$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,782,784,795,885,27924,27925,76383</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22027840$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Krishnamoorthy, Sriram</creatorcontrib><creatorcontrib>Park, Pil Sung</creatorcontrib><creatorcontrib>Rajan, Siddharth</creatorcontrib><title>Demonstration of forward inter-band tunneling in GaN by polarization engineering</title><title>Applied physics letters</title><description>We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153mA/cm
2
at 10mV, and 17.7A/cm
2
peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio of 4 at room temperature. The forward current density achieved in this work meets the typical current drive requirements of a multi-junction solar cell.</description><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CRYSTAL GROWTH</subject><subject>CURRENT DENSITY</subject><subject>ELECTRIC CURRENTS</subject><subject>ELECTRONIC STRUCTURE</subject><subject>GALLIUM NITRIDES</subject><subject>HETEROJUNCTIONS</subject><subject>INDIUM COMPOUNDS</subject><subject>INTERFACES</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>PLASMA</subject><subject>POLARIZATION</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SOLAR CELLS</subject><subject>SUPERCONDUCTING JUNCTIONS</subject><subject>TEMPERATURE RANGE 0273-0400 K</subject><subject>TUNNEL DIODES</subject><subject>TUNNEL EFFECT</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp1kMFOAyEQhonRxLV68A028eRhKyywsBcTU7WaNOpBzwRYqJgWGsCY-vRStxcPniYz-ebPzAfAOYJTBDt8haa46zretQegQpCxBiPED0EFIcRN11N0DE5S-igtbTGuwMutWQefcpTZBV8HW9sQv2QcaueziY2Sfqjzp_dm5fyyDOu5fKrVtt6ElYzue1wzfum8MbEgp-DIylUyZ_s6AW_3d6-zh2bxPH-c3SwaTRDOjWJs6CnHba84o8QoopW2rGeIcGks45RTRhQivRkGpZVRjBSEU9P3bFAQT8DFmBtSdiJpl41-16EcqrNoW9gyTnbU5UjpGFKKxopNdGsZtwJBsRMmkNgLK-z1yO7Cfv_6H_5jTQQrijX8A83Vc4Q</recordid><startdate>20111205</startdate><enddate>20111205</enddate><creator>Krishnamoorthy, Sriram</creator><creator>Park, Pil Sung</creator><creator>Rajan, Siddharth</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20111205</creationdate><title>Demonstration of forward inter-band tunneling in GaN by polarization engineering</title><author>Krishnamoorthy, Sriram ; Park, Pil Sung ; Rajan, Siddharth</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c413t-b77d958329b8754eb4cbcf797148aef7858574b149eddbcbeb744cb85e997db03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CRYSTAL GROWTH</topic><topic>CURRENT DENSITY</topic><topic>ELECTRIC CURRENTS</topic><topic>ELECTRONIC STRUCTURE</topic><topic>GALLIUM NITRIDES</topic><topic>HETEROJUNCTIONS</topic><topic>INDIUM COMPOUNDS</topic><topic>INTERFACES</topic><topic>MATERIALS SCIENCE</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>PLASMA</topic><topic>POLARIZATION</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SOLAR CELLS</topic><topic>SUPERCONDUCTING JUNCTIONS</topic><topic>TEMPERATURE RANGE 0273-0400 K</topic><topic>TUNNEL DIODES</topic><topic>TUNNEL EFFECT</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Krishnamoorthy, Sriram</creatorcontrib><creatorcontrib>Park, Pil Sung</creatorcontrib><creatorcontrib>Rajan, Siddharth</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Krishnamoorthy, Sriram</au><au>Park, Pil Sung</au><au>Rajan, Siddharth</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Demonstration of forward inter-band tunneling in GaN by polarization engineering</atitle><jtitle>Applied physics letters</jtitle><date>2011-12-05</date><risdate>2011</risdate><volume>99</volume><issue>23</issue><spage>233504</spage><epage>233504-3</epage><pages>233504-233504-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153mA/cm
2
at 10mV, and 17.7A/cm
2
peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio of 4 at room temperature. The forward current density achieved in this work meets the typical current drive requirements of a multi-junction solar cell.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.3666862</doi><oa>free_for_read</oa></addata></record> |
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source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); American Institute of Physics |
subjects | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL GROWTH CURRENT DENSITY ELECTRIC CURRENTS ELECTRONIC STRUCTURE GALLIUM NITRIDES HETEROJUNCTIONS INDIUM COMPOUNDS INTERFACES MATERIALS SCIENCE MOLECULAR BEAM EPITAXY PLASMA POLARIZATION SEMICONDUCTOR MATERIALS SOLAR CELLS SUPERCONDUCTING JUNCTIONS TEMPERATURE RANGE 0273-0400 K TUNNEL DIODES TUNNEL EFFECT |
title | Demonstration of forward inter-band tunneling in GaN by polarization engineering |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T06%3A26%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Demonstration%20of%20forward%20inter-band%20tunneling%20in%20GaN%20by%20polarization%20engineering&rft.jtitle=Applied%20physics%20letters&rft.au=Krishnamoorthy,%20Sriram&rft.date=2011-12-05&rft.volume=99&rft.issue=23&rft.spage=233504&rft.epage=233504-3&rft.pages=233504-233504-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.3666862&rft_dat=%3Cscitation_osti_%3Eapl%3C/scitation_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c413t-b77d958329b8754eb4cbcf797148aef7858574b149eddbcbeb744cb85e997db03%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |