Laser-induced fluorescence of fused silica irradiated by ArF excimer laser

Laser-induced fluorescence (LIF) of high-purity fused silica irradiated by ArF excimer laser is studied experimentally. LIF bands of the fused silica centered at 281 nm, 478 nm, and 650 nm are observed simultaneously. Furthermore, the angular distribution of the three fluorescence peaks is examined....

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Bibliographic Details
Published in:Journal of applied physics 2011-07, Vol.110 (1), p.013107-013107-5
Main Authors: Zhang, Haibo, Yuan, Zhijun, Zhou, Jun, Dong, Jingxing, Wei, Yunrong, Lou, Qihong
Format: Article
Language:English
Subjects:
ABSORPTION
ANGULAR DISTRIBUTION
ARGON FLUORIDES
COLOR CENTERS
EMISSION SPECTRA
EXCIMER LASERS
FLUORESCENCE
IRRADIATION
LASER RADIATION
MATERIALS SCIENCE
MULTI-PHOTON PROCESSES
PHYSICAL RADIATION EFFECTS
POWER DENSITY
SILICA
SILICON COMPOUNDS
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Summary:Laser-induced fluorescence (LIF) of high-purity fused silica irradiated by ArF excimer laser is studied experimentally. LIF bands of the fused silica centered at 281 nm, 478 nm, and 650 nm are observed simultaneously. Furthermore, the angular distribution of the three fluorescence peaks is examined. Microscopic image of the laser modified fused silica indicates that scattering of the generated fluorescence by laser-induced damage sites is the main reason for the angular distribution of LIF signals. Finally, the dependence of LIF signals intensities of the fused silica on laser power densities is presented. LIF signals show a squared power density dependence, which indicates that laser-induced defects are formed mainly via two-photon absorption processes.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3608163