Influence of local atomic configuration in AlGdN phosphor thin films on deep ultra-violet luminescence intensity

We investigated the narrowband ultraviolet emission properties of Al 0.94 Gd 0.06 N phosphor thin films pumped by an electron beam. An extremely narrow luminescence line, which was less than 1 nm from the intra-orbital f-f transition in Gd 3+ ions, was confirmed at 318 nm. The corresponding emission...

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Bibliographic Details
Published in:Journal of applied physics 2011-11, Vol.110 (9), p.093108-093108-4
Main Authors: Kitayama, Shinya, Yoshitomi, Hiroaki, Iwahashi, Shinya, Nakamura, Junya, Kita, Takashi, Chigi, Yoshitaka, Nishimoto, Tetsuro, Tanaka, Hiroyuki, Kobayashi, Mikihiro, Ishihara, Tsuguo, Izumi, Hirokazu
Format: Article
Language:English
Subjects:
ABSORPTION SPECTROSCOPY
ALUMINIUM COMPOUNDS
CRYSTAL GROWTH
ELECTRON BEAMS
FINE STRUCTURE
GADOLINIUM IONS
GADOLINIUM NITRIDES
IRRADIATION
MATERIALS SCIENCE
PHOSPHORS
PHOTOLUMINESCENCE
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
THIN FILMS
ULTRAVIOLET RADIATION
X-RAY SPECTROSCOPY
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Summary:We investigated the narrowband ultraviolet emission properties of Al 0.94 Gd 0.06 N phosphor thin films pumped by an electron beam. An extremely narrow luminescence line, which was less than 1 nm from the intra-orbital f-f transition in Gd 3+ ions, was confirmed at 318 nm. The corresponding emission efficiency was improved by decreasing the growth temperature. The extended X-ray absorption fine structure analysis of the local atomic structure revealed that a low-temperature growth led to the formation of a uniform atomic configuration around Gd, which was found to play a key role in improving the luminescence intensity of the films.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3658845