Growth mechanism and electronic properties of epitaxial In{sub 2}O{sub 3} films on sapphire

In this work, we report on the epitaxial growth of high-quality cubic indium oxide thick films on c-plane sapphire substrates using a two-step growth process. The epitaxial relationship of In{sub 2}O{sub 3} on (0001) Al{sub 2}O{sub 3} has been investigated. The (222) plane spacing and lattice parame...

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Bibliographic Details
Published in:Journal of applied physics 2011-11, Vol.110 (9)
Main Authors: Wang, Ch. Y., Kirste, L., Roehlig, C. C., Koehler, K., Cimalla, V., Ambacher, O., Morales, F. M., Manuel, J. M., Garcia, R.
Format: Article
Language:English
Subjects:
ALUMINIUM OXIDES
CHEMICAL VAPOR DEPOSITION
ELECTRON DENSITY
ELECTRONIC STRUCTURE
EPITAXY
HALL EFFECT
INDIUM OXIDES
INTERFACES
IRRADIATION
LATTICE PARAMETERS
LAYERS
MATERIALS SCIENCE
OXIDATION
SAPPHIRE
STRAINS
SUBSTRATES
SURFACES
ULTRAVIOLET RADIATION
VISIBLE RADIATION
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Summary:In this work, we report on the epitaxial growth of high-quality cubic indium oxide thick films on c-plane sapphire substrates using a two-step growth process. The epitaxial relationship of In{sub 2}O{sub 3} on (0001) Al{sub 2}O{sub 3} has been investigated. The (222) plane spacing and lattice parameter of a most strain-relaxed high-quality In{sub 2}O{sub 3} film have been determined to be 292.58 pm and 1013.53 pm, respectively. The electronic properties in dependence of the film thickness are interpreted using a three-region model. The density at the surface and interface totals (3.3{+-}1.5)x10{sup 13}cm{sup -2}, while the background electron density in the bulk was determined to be (2.4{+-}0.5)x10{sup 18}cm{sup -3}. Furthermore, post treatments such as irradiation via ultraviolet light and ozone oxidation have been found to influence only the surface layer, while the bulk electronic properties remain unchanged.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3658217