Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition

We have grown graphene by chemical vapor deposition (CVD) and transferred it onto Si/SiO 2 substrates to make tens of micron scale devices for Raman spectroscopy study. The effect of electron beam (e-beam) irradiation of various doses (600 to 12000 μ C/cm 2 ) on CVD grown graphene has been examined...

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Bibliographic Details
Published in:Journal of applied physics 2012-04, Vol.111 (8), p.084307-084307-5
Main Authors: Iqbal, M. Z., Kumar Singh, Arun, Iqbal, M. W., Seo, Sunae, Eom, Jonghwa
Format: Article
Language:English
Subjects:
AMORPHOUS STATE
CHEMICAL VAPOR DEPOSITION
CRYSTAL LATTICES
CRYSTALS
Devices
ELECTRON BEAMS
ENERGY BEAM DEPOSITION
Evolution
Graphene
GRAPHITE
IRRADIATION
LAYERS
MATERIALS SCIENCE
NANOSCIENCE AND NANOTECHNOLOGY
NANOSTRUCTURES
PLASMA
RADIATION DOSES
RADIATION EFFECTS
RAMAN SPECTRA
RAMAN SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
SILICON OXIDES
Silicon substrates
STRAINS
SUBSTRATES
Transformations
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Summary:We have grown graphene by chemical vapor deposition (CVD) and transferred it onto Si/SiO 2 substrates to make tens of micron scale devices for Raman spectroscopy study. The effect of electron beam (e-beam) irradiation of various doses (600 to 12000 μ C/cm 2 ) on CVD grown graphene has been examined by using Raman spectroscopy. It is found that the radiation exposures result in the appearance of the strong disorder D band attributed the damage to the lattice. The evolution of peak frequencies, intensities, and widths of the main Raman bands of CVD graphene is analyzed as a function of defect created by e-beam irradiation. Especially, the D and G peak evolution with increasing radiation dose follows the amorphization trajectory, which suggests transformation of graphene to the nanocrystalline and then to amorphous form. We have also estimated the strain induced by e-beam irradiation in CVD graphene. These results obtained for CVD graphene are in line with previous findings reported for the mechanically exfoliated graphene [D. Teweldebrhan and A. A. Balandin, Appl. Phys. Lett. 94 , 013101 (2009)]. The results have important implications for CVD graphene characterization and device fabrication, which rely on the electron microscopy.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4704197