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Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs

The results of experimental studies concerning the optical polarization anisotropy of electroluminescence and absorption spectra of systems with a varied number of tunnel-coupled vertically correlated In(Ga)As/GaAs quantum dots (QDs), built into a double-section laser with equal-length sections, are...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2012-01, Vol.46 (1), p.93-98
Main Authors: Sobolev, M. M., Gadzhiyev, I. M., Bakshaev, I. O., Nevedomskiy, V. N., Buyalo, M. S., Zadiranov, Yu. M., Zolotareva, R. V., Portnoi, E. L.
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Language:English
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Summary:The results of experimental studies concerning the optical polarization anisotropy of electroluminescence and absorption spectra of systems with a varied number of tunnel-coupled vertically correlated In(Ga)As/GaAs quantum dots (QDs), built into a double-section laser with equal-length sections, are presented. One such system is a QD superlattice exhibiting the Wannier-Stark effect. The involvement of heavyhole ground states in optical transitions for light polarized both in the plane perpendicular to the growth axis ( X-Y ) and along the growth direction Z of the structure was observed. The degree of polarization anisotropy depends on the height of vertically correlated QDs and the QD superlattice: the total thickness of all In(Ga)As QD layers and GaAs spacers between the QDs, which is related to the Z component of the wave function of heavy-hole ground states for vertically correlated QDs and for the QD superlattice.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782612010186