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Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs
The results of experimental studies concerning the optical polarization anisotropy of electroluminescence and absorption spectra of systems with a varied number of tunnel-coupled vertically correlated In(Ga)As/GaAs quantum dots (QDs), built into a double-section laser with equal-length sections, are...
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Published in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2012-01, Vol.46 (1), p.93-98 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The results of experimental studies concerning the optical polarization anisotropy of electroluminescence and absorption spectra of systems with a varied number of tunnel-coupled vertically correlated In(Ga)As/GaAs quantum dots (QDs), built into a double-section laser with equal-length sections, are presented. One such system is a QD superlattice exhibiting the Wannier-Stark effect. The involvement of heavyhole ground states in optical transitions for light polarized both in the plane perpendicular to the growth axis (
X-Y
) and along the growth direction
Z
of the structure was observed. The degree of polarization anisotropy depends on the height of vertically correlated QDs and the QD superlattice: the total thickness of all In(Ga)As QD layers and GaAs spacers between the QDs, which is related to the
Z
component of the wave function of heavy-hole ground states for vertically correlated QDs and for the QD superlattice. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782612010186 |