Loading…

Exceptional Thermochemical Stability of Graphene on N‑Polar GaN for Remote Epitaxy

In this study, we investigate the thermochemical stability of graphene on the GaN substrate for metal–organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite excellent physical properties of GaN, making it a compelling choice for high-performance electronic and light-emitting device...

Full description

Saved in:
Bibliographic Details
Published in:ACS nano 2023-11, Vol.17 (21), p.21678-21689
Main Authors: Choi, Joonghoon, Jeong, Junseok, Zhu, Xiangyu, Kim, Junghwan, Kang, Bong Kyun, Wang, Qingxiao, Park, Bo-In, Lee, Seokje, Kim, Jekyung, Kim, Hyunseok, Yoo, Jinkyoung, Yi, Gyu-Chul, Lee, Dong-Seon, Kim, Jeehwan, Hong, Suklyun, Kim, Moon J., Hong, Young Joon
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-a337t-99d06f90c88cf5f85d4d7dd9b70e67fe2b1dfeaa7f82fe5c45857087cffdcadb3
cites cdi_FETCH-LOGICAL-a337t-99d06f90c88cf5f85d4d7dd9b70e67fe2b1dfeaa7f82fe5c45857087cffdcadb3
container_end_page 21689
container_issue 21
container_start_page 21678
container_title ACS nano
container_volume 17
creator Choi, Joonghoon
Jeong, Junseok
Zhu, Xiangyu
Kim, Junghwan
Kang, Bong Kyun
Wang, Qingxiao
Park, Bo-In
Lee, Seokje
Kim, Jekyung
Kim, Hyunseok
Yoo, Jinkyoung
Yi, Gyu-Chul
Lee, Dong-Seon
Kim, Jeehwan
Hong, Suklyun
Kim, Moon J.
Hong, Young Joon
description In this study, we investigate the thermochemical stability of graphene on the GaN substrate for metal–organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite excellent physical properties of GaN, making it a compelling choice for high-performance electronic and light-emitting device applications, the challenge of thermochemical decomposition of graphene on a GaN substrate at high temperatures has obstructed the achievement of remote homoepitaxy via MOCVD. Our research uncovers an unexpected stability of graphene on N-polar GaN, thereby enabling the MOCVD-based remote homoepitaxy of N-polar GaN. Our comparative analysis of N- and Ga-polar GaN substrates reveals markedly different outcomes: while a graphene/N-polar GaN substrate produces releasable microcrystals (μCs), a graphene/Ga-polar GaN substrate yields nonreleasable thin films. We attribute this discrepancy to the polarity-dependent thermochemical stability of graphene on the GaN substrate and its subsequent reaction with hydrogen. Evidence obtained from Raman spectroscopy, electron microscopic analyses, and overlayer delamination points to a pronounced thermochemical stability of graphene on N-polar GaN during MOCVD-based remote homoepitaxy. Molecular dynamics simulations, corroborated by experimental data, further substantiate that the thermochemical stability of graphene is reliant on the polarity of GaN, due to different reactions with hydrogen at high temperatures. Based on the N-polar remote homoepitaxy of μCs, the practical application of our findings was demonstrated in fabrication of flexible light-emitting diodes composed of p–n junction μCs with InGaN heterostructures.
doi_str_mv 10.1021/acsnano.3c06828
format article
fullrecord <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_2204204</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2878018943</sourcerecordid><originalsourceid>FETCH-LOGICAL-a337t-99d06f90c88cf5f85d4d7dd9b70e67fe2b1dfeaa7f82fe5c45857087cffdcadb3</originalsourceid><addsrcrecordid>eNp1kM9KAzEQh4MoWKtnr8GTINtm_yZ7FKlVKFW0greQzU7YlN1kTVJob76Cr-iTuNLiTRiYGeb7zeFD6DImk5gk8VRIb4Sxk1SSgiXsCI3iMi0iwor34785j0_RmfdrQnLKaDFCq9lWQh-0NaLFqwZcZ2UDnZbD-hpEpVsddtgqPHeib8AAtgYvvz-_nm0rHJ6LJVbW4RfobAA863UQ2905OlGi9XBx6GP0dj9b3T1Ei6f5493tIhJpSkNUljUpVEkkY1LliuV1VtO6LitKoKAKkiquFQhBFUsU5DLLWU4Jo1KpWoq6Ssfoav_X-qC5lzqAbKQ1BmTgSUKyoQboeg_1zn5swAfeaS-hbYUBu_E8YZSRmJVZOqDTPSqd9d6B4r3TnXA7HhP-K5kfJPOD5CFxs08MB762Gzdo9P_SP_Ylgeg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2878018943</pqid></control><display><type>article</type><title>Exceptional Thermochemical Stability of Graphene on N‑Polar GaN for Remote Epitaxy</title><source>American Chemical Society:Jisc Collections:American Chemical Society Read &amp; Publish Agreement 2022-2024 (Reading list)</source><creator>Choi, Joonghoon ; Jeong, Junseok ; Zhu, Xiangyu ; Kim, Junghwan ; Kang, Bong Kyun ; Wang, Qingxiao ; Park, Bo-In ; Lee, Seokje ; Kim, Jekyung ; Kim, Hyunseok ; Yoo, Jinkyoung ; Yi, Gyu-Chul ; Lee, Dong-Seon ; Kim, Jeehwan ; Hong, Suklyun ; Kim, Moon J. ; Hong, Young Joon</creator><creatorcontrib>Choi, Joonghoon ; Jeong, Junseok ; Zhu, Xiangyu ; Kim, Junghwan ; Kang, Bong Kyun ; Wang, Qingxiao ; Park, Bo-In ; Lee, Seokje ; Kim, Jekyung ; Kim, Hyunseok ; Yoo, Jinkyoung ; Yi, Gyu-Chul ; Lee, Dong-Seon ; Kim, Jeehwan ; Hong, Suklyun ; Kim, Moon J. ; Hong, Young Joon ; Sandia National Lab. (SNL-NM), Albuquerque, NM (United States) ; Los Alamos National Laboratory (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)</creatorcontrib><description>In this study, we investigate the thermochemical stability of graphene on the GaN substrate for metal–organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite excellent physical properties of GaN, making it a compelling choice for high-performance electronic and light-emitting device applications, the challenge of thermochemical decomposition of graphene on a GaN substrate at high temperatures has obstructed the achievement of remote homoepitaxy via MOCVD. Our research uncovers an unexpected stability of graphene on N-polar GaN, thereby enabling the MOCVD-based remote homoepitaxy of N-polar GaN. Our comparative analysis of N- and Ga-polar GaN substrates reveals markedly different outcomes: while a graphene/N-polar GaN substrate produces releasable microcrystals (μCs), a graphene/Ga-polar GaN substrate yields nonreleasable thin films. We attribute this discrepancy to the polarity-dependent thermochemical stability of graphene on the GaN substrate and its subsequent reaction with hydrogen. Evidence obtained from Raman spectroscopy, electron microscopic analyses, and overlayer delamination points to a pronounced thermochemical stability of graphene on N-polar GaN during MOCVD-based remote homoepitaxy. Molecular dynamics simulations, corroborated by experimental data, further substantiate that the thermochemical stability of graphene is reliant on the polarity of GaN, due to different reactions with hydrogen at high temperatures. Based on the N-polar remote homoepitaxy of μCs, the practical application of our findings was demonstrated in fabrication of flexible light-emitting diodes composed of p–n junction μCs with InGaN heterostructures.</description><identifier>ISSN: 1936-0851</identifier><identifier>EISSN: 1936-086X</identifier><identifier>DOI: 10.1021/acsnano.3c06828</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><subject>deformable light-emitting diode ; INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY ; N-polar GaN ; polarity ; remote epitaxy ; thermochemical stability</subject><ispartof>ACS nano, 2023-11, Vol.17 (21), p.21678-21689</ispartof><rights>2023 American Chemical Society</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a337t-99d06f90c88cf5f85d4d7dd9b70e67fe2b1dfeaa7f82fe5c45857087cffdcadb3</citedby><cites>FETCH-LOGICAL-a337t-99d06f90c88cf5f85d4d7dd9b70e67fe2b1dfeaa7f82fe5c45857087cffdcadb3</cites><orcidid>0009-0006-6642-7826 ; 0000-0002-1831-8004 ; 0000-0002-9578-6979 ; 0000-0002-2972-493X ; 0000-0001-6504-9209 ; 0000-0002-7703-3455 ; 0000-0002-1547-0967 ; 0000-0003-2706-8702 ; 0000000215470967 ; 0000000327068702 ; 0000000165049209 ; 0000000218318004 ; 0000000277033455 ; 0009000666427826 ; 000000022972493X ; 0000000295786979</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/servlets/purl/2204204$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Choi, Joonghoon</creatorcontrib><creatorcontrib>Jeong, Junseok</creatorcontrib><creatorcontrib>Zhu, Xiangyu</creatorcontrib><creatorcontrib>Kim, Junghwan</creatorcontrib><creatorcontrib>Kang, Bong Kyun</creatorcontrib><creatorcontrib>Wang, Qingxiao</creatorcontrib><creatorcontrib>Park, Bo-In</creatorcontrib><creatorcontrib>Lee, Seokje</creatorcontrib><creatorcontrib>Kim, Jekyung</creatorcontrib><creatorcontrib>Kim, Hyunseok</creatorcontrib><creatorcontrib>Yoo, Jinkyoung</creatorcontrib><creatorcontrib>Yi, Gyu-Chul</creatorcontrib><creatorcontrib>Lee, Dong-Seon</creatorcontrib><creatorcontrib>Kim, Jeehwan</creatorcontrib><creatorcontrib>Hong, Suklyun</creatorcontrib><creatorcontrib>Kim, Moon J.</creatorcontrib><creatorcontrib>Hong, Young Joon</creatorcontrib><creatorcontrib>Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)</creatorcontrib><creatorcontrib>Los Alamos National Laboratory (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)</creatorcontrib><title>Exceptional Thermochemical Stability of Graphene on N‑Polar GaN for Remote Epitaxy</title><title>ACS nano</title><addtitle>ACS Nano</addtitle><description>In this study, we investigate the thermochemical stability of graphene on the GaN substrate for metal–organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite excellent physical properties of GaN, making it a compelling choice for high-performance electronic and light-emitting device applications, the challenge of thermochemical decomposition of graphene on a GaN substrate at high temperatures has obstructed the achievement of remote homoepitaxy via MOCVD. Our research uncovers an unexpected stability of graphene on N-polar GaN, thereby enabling the MOCVD-based remote homoepitaxy of N-polar GaN. Our comparative analysis of N- and Ga-polar GaN substrates reveals markedly different outcomes: while a graphene/N-polar GaN substrate produces releasable microcrystals (μCs), a graphene/Ga-polar GaN substrate yields nonreleasable thin films. We attribute this discrepancy to the polarity-dependent thermochemical stability of graphene on the GaN substrate and its subsequent reaction with hydrogen. Evidence obtained from Raman spectroscopy, electron microscopic analyses, and overlayer delamination points to a pronounced thermochemical stability of graphene on N-polar GaN during MOCVD-based remote homoepitaxy. Molecular dynamics simulations, corroborated by experimental data, further substantiate that the thermochemical stability of graphene is reliant on the polarity of GaN, due to different reactions with hydrogen at high temperatures. Based on the N-polar remote homoepitaxy of μCs, the practical application of our findings was demonstrated in fabrication of flexible light-emitting diodes composed of p–n junction μCs with InGaN heterostructures.</description><subject>deformable light-emitting diode</subject><subject>INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY</subject><subject>N-polar GaN</subject><subject>polarity</subject><subject>remote epitaxy</subject><subject>thermochemical stability</subject><issn>1936-0851</issn><issn>1936-086X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp1kM9KAzEQh4MoWKtnr8GTINtm_yZ7FKlVKFW0greQzU7YlN1kTVJob76Cr-iTuNLiTRiYGeb7zeFD6DImk5gk8VRIb4Sxk1SSgiXsCI3iMi0iwor34785j0_RmfdrQnLKaDFCq9lWQh-0NaLFqwZcZ2UDnZbD-hpEpVsddtgqPHeib8AAtgYvvz-_nm0rHJ6LJVbW4RfobAA863UQ2905OlGi9XBx6GP0dj9b3T1Ei6f5493tIhJpSkNUljUpVEkkY1LliuV1VtO6LitKoKAKkiquFQhBFUsU5DLLWU4Jo1KpWoq6Ssfoav_X-qC5lzqAbKQ1BmTgSUKyoQboeg_1zn5swAfeaS-hbYUBu_E8YZSRmJVZOqDTPSqd9d6B4r3TnXA7HhP-K5kfJPOD5CFxs08MB762Gzdo9P_SP_Ylgeg</recordid><startdate>20231114</startdate><enddate>20231114</enddate><creator>Choi, Joonghoon</creator><creator>Jeong, Junseok</creator><creator>Zhu, Xiangyu</creator><creator>Kim, Junghwan</creator><creator>Kang, Bong Kyun</creator><creator>Wang, Qingxiao</creator><creator>Park, Bo-In</creator><creator>Lee, Seokje</creator><creator>Kim, Jekyung</creator><creator>Kim, Hyunseok</creator><creator>Yoo, Jinkyoung</creator><creator>Yi, Gyu-Chul</creator><creator>Lee, Dong-Seon</creator><creator>Kim, Jeehwan</creator><creator>Hong, Suklyun</creator><creator>Kim, Moon J.</creator><creator>Hong, Young Joon</creator><general>American Chemical Society</general><general>American Chemical Society (ACS)</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>OIOZB</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0009-0006-6642-7826</orcidid><orcidid>https://orcid.org/0000-0002-1831-8004</orcidid><orcidid>https://orcid.org/0000-0002-9578-6979</orcidid><orcidid>https://orcid.org/0000-0002-2972-493X</orcidid><orcidid>https://orcid.org/0000-0001-6504-9209</orcidid><orcidid>https://orcid.org/0000-0002-7703-3455</orcidid><orcidid>https://orcid.org/0000-0002-1547-0967</orcidid><orcidid>https://orcid.org/0000-0003-2706-8702</orcidid><orcidid>https://orcid.org/0000000215470967</orcidid><orcidid>https://orcid.org/0000000327068702</orcidid><orcidid>https://orcid.org/0000000165049209</orcidid><orcidid>https://orcid.org/0000000218318004</orcidid><orcidid>https://orcid.org/0000000277033455</orcidid><orcidid>https://orcid.org/0009000666427826</orcidid><orcidid>https://orcid.org/000000022972493X</orcidid><orcidid>https://orcid.org/0000000295786979</orcidid></search><sort><creationdate>20231114</creationdate><title>Exceptional Thermochemical Stability of Graphene on N‑Polar GaN for Remote Epitaxy</title><author>Choi, Joonghoon ; Jeong, Junseok ; Zhu, Xiangyu ; Kim, Junghwan ; Kang, Bong Kyun ; Wang, Qingxiao ; Park, Bo-In ; Lee, Seokje ; Kim, Jekyung ; Kim, Hyunseok ; Yoo, Jinkyoung ; Yi, Gyu-Chul ; Lee, Dong-Seon ; Kim, Jeehwan ; Hong, Suklyun ; Kim, Moon J. ; Hong, Young Joon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a337t-99d06f90c88cf5f85d4d7dd9b70e67fe2b1dfeaa7f82fe5c45857087cffdcadb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>deformable light-emitting diode</topic><topic>INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY</topic><topic>N-polar GaN</topic><topic>polarity</topic><topic>remote epitaxy</topic><topic>thermochemical stability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Choi, Joonghoon</creatorcontrib><creatorcontrib>Jeong, Junseok</creatorcontrib><creatorcontrib>Zhu, Xiangyu</creatorcontrib><creatorcontrib>Kim, Junghwan</creatorcontrib><creatorcontrib>Kang, Bong Kyun</creatorcontrib><creatorcontrib>Wang, Qingxiao</creatorcontrib><creatorcontrib>Park, Bo-In</creatorcontrib><creatorcontrib>Lee, Seokje</creatorcontrib><creatorcontrib>Kim, Jekyung</creatorcontrib><creatorcontrib>Kim, Hyunseok</creatorcontrib><creatorcontrib>Yoo, Jinkyoung</creatorcontrib><creatorcontrib>Yi, Gyu-Chul</creatorcontrib><creatorcontrib>Lee, Dong-Seon</creatorcontrib><creatorcontrib>Kim, Jeehwan</creatorcontrib><creatorcontrib>Hong, Suklyun</creatorcontrib><creatorcontrib>Kim, Moon J.</creatorcontrib><creatorcontrib>Hong, Young Joon</creatorcontrib><creatorcontrib>Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)</creatorcontrib><creatorcontrib>Los Alamos National Laboratory (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)</creatorcontrib><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>OSTI.GOV - Hybrid</collection><collection>OSTI.GOV</collection><jtitle>ACS nano</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Choi, Joonghoon</au><au>Jeong, Junseok</au><au>Zhu, Xiangyu</au><au>Kim, Junghwan</au><au>Kang, Bong Kyun</au><au>Wang, Qingxiao</au><au>Park, Bo-In</au><au>Lee, Seokje</au><au>Kim, Jekyung</au><au>Kim, Hyunseok</au><au>Yoo, Jinkyoung</au><au>Yi, Gyu-Chul</au><au>Lee, Dong-Seon</au><au>Kim, Jeehwan</au><au>Hong, Suklyun</au><au>Kim, Moon J.</au><au>Hong, Young Joon</au><aucorp>Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)</aucorp><aucorp>Los Alamos National Laboratory (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Exceptional Thermochemical Stability of Graphene on N‑Polar GaN for Remote Epitaxy</atitle><jtitle>ACS nano</jtitle><addtitle>ACS Nano</addtitle><date>2023-11-14</date><risdate>2023</risdate><volume>17</volume><issue>21</issue><spage>21678</spage><epage>21689</epage><pages>21678-21689</pages><issn>1936-0851</issn><eissn>1936-086X</eissn><abstract>In this study, we investigate the thermochemical stability of graphene on the GaN substrate for metal–organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite excellent physical properties of GaN, making it a compelling choice for high-performance electronic and light-emitting device applications, the challenge of thermochemical decomposition of graphene on a GaN substrate at high temperatures has obstructed the achievement of remote homoepitaxy via MOCVD. Our research uncovers an unexpected stability of graphene on N-polar GaN, thereby enabling the MOCVD-based remote homoepitaxy of N-polar GaN. Our comparative analysis of N- and Ga-polar GaN substrates reveals markedly different outcomes: while a graphene/N-polar GaN substrate produces releasable microcrystals (μCs), a graphene/Ga-polar GaN substrate yields nonreleasable thin films. We attribute this discrepancy to the polarity-dependent thermochemical stability of graphene on the GaN substrate and its subsequent reaction with hydrogen. Evidence obtained from Raman spectroscopy, electron microscopic analyses, and overlayer delamination points to a pronounced thermochemical stability of graphene on N-polar GaN during MOCVD-based remote homoepitaxy. Molecular dynamics simulations, corroborated by experimental data, further substantiate that the thermochemical stability of graphene is reliant on the polarity of GaN, due to different reactions with hydrogen at high temperatures. Based on the N-polar remote homoepitaxy of μCs, the practical application of our findings was demonstrated in fabrication of flexible light-emitting diodes composed of p–n junction μCs with InGaN heterostructures.</abstract><cop>United States</cop><pub>American Chemical Society</pub><doi>10.1021/acsnano.3c06828</doi><tpages>12</tpages><orcidid>https://orcid.org/0009-0006-6642-7826</orcidid><orcidid>https://orcid.org/0000-0002-1831-8004</orcidid><orcidid>https://orcid.org/0000-0002-9578-6979</orcidid><orcidid>https://orcid.org/0000-0002-2972-493X</orcidid><orcidid>https://orcid.org/0000-0001-6504-9209</orcidid><orcidid>https://orcid.org/0000-0002-7703-3455</orcidid><orcidid>https://orcid.org/0000-0002-1547-0967</orcidid><orcidid>https://orcid.org/0000-0003-2706-8702</orcidid><orcidid>https://orcid.org/0000000215470967</orcidid><orcidid>https://orcid.org/0000000327068702</orcidid><orcidid>https://orcid.org/0000000165049209</orcidid><orcidid>https://orcid.org/0000000218318004</orcidid><orcidid>https://orcid.org/0000000277033455</orcidid><orcidid>https://orcid.org/0009000666427826</orcidid><orcidid>https://orcid.org/000000022972493X</orcidid><orcidid>https://orcid.org/0000000295786979</orcidid><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 1936-0851
ispartof ACS nano, 2023-11, Vol.17 (21), p.21678-21689
issn 1936-0851
1936-086X
language eng
recordid cdi_osti_scitechconnect_2204204
source American Chemical Society:Jisc Collections:American Chemical Society Read & Publish Agreement 2022-2024 (Reading list)
subjects deformable light-emitting diode
INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
N-polar GaN
polarity
remote epitaxy
thermochemical stability
title Exceptional Thermochemical Stability of Graphene on N‑Polar GaN for Remote Epitaxy
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T04%3A19%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Exceptional%20Thermochemical%20Stability%20of%20Graphene%20on%20N%E2%80%91Polar%20GaN%20for%20Remote%20Epitaxy&rft.jtitle=ACS%20nano&rft.au=Choi,%20Joonghoon&rft.aucorp=Sandia%20National%20Lab.%20(SNL-NM),%20Albuquerque,%20NM%20(United%20States)&rft.date=2023-11-14&rft.volume=17&rft.issue=21&rft.spage=21678&rft.epage=21689&rft.pages=21678-21689&rft.issn=1936-0851&rft.eissn=1936-086X&rft_id=info:doi/10.1021/acsnano.3c06828&rft_dat=%3Cproquest_osti_%3E2878018943%3C/proquest_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-a337t-99d06f90c88cf5f85d4d7dd9b70e67fe2b1dfeaa7f82fe5c45857087cffdcadb3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2878018943&rft_id=info:pmid/&rfr_iscdi=true