Loading…
Exceptional Thermochemical Stability of Graphene on N‑Polar GaN for Remote Epitaxy
In this study, we investigate the thermochemical stability of graphene on the GaN substrate for metal–organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite excellent physical properties of GaN, making it a compelling choice for high-performance electronic and light-emitting device...
Saved in:
Published in: | ACS nano 2023-11, Vol.17 (21), p.21678-21689 |
---|---|
Main Authors: | , , , , , , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | cdi_FETCH-LOGICAL-a337t-99d06f90c88cf5f85d4d7dd9b70e67fe2b1dfeaa7f82fe5c45857087cffdcadb3 |
---|---|
cites | cdi_FETCH-LOGICAL-a337t-99d06f90c88cf5f85d4d7dd9b70e67fe2b1dfeaa7f82fe5c45857087cffdcadb3 |
container_end_page | 21689 |
container_issue | 21 |
container_start_page | 21678 |
container_title | ACS nano |
container_volume | 17 |
creator | Choi, Joonghoon Jeong, Junseok Zhu, Xiangyu Kim, Junghwan Kang, Bong Kyun Wang, Qingxiao Park, Bo-In Lee, Seokje Kim, Jekyung Kim, Hyunseok Yoo, Jinkyoung Yi, Gyu-Chul Lee, Dong-Seon Kim, Jeehwan Hong, Suklyun Kim, Moon J. Hong, Young Joon |
description | In this study, we investigate the thermochemical stability of graphene on the GaN substrate for metal–organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite excellent physical properties of GaN, making it a compelling choice for high-performance electronic and light-emitting device applications, the challenge of thermochemical decomposition of graphene on a GaN substrate at high temperatures has obstructed the achievement of remote homoepitaxy via MOCVD. Our research uncovers an unexpected stability of graphene on N-polar GaN, thereby enabling the MOCVD-based remote homoepitaxy of N-polar GaN. Our comparative analysis of N- and Ga-polar GaN substrates reveals markedly different outcomes: while a graphene/N-polar GaN substrate produces releasable microcrystals (μCs), a graphene/Ga-polar GaN substrate yields nonreleasable thin films. We attribute this discrepancy to the polarity-dependent thermochemical stability of graphene on the GaN substrate and its subsequent reaction with hydrogen. Evidence obtained from Raman spectroscopy, electron microscopic analyses, and overlayer delamination points to a pronounced thermochemical stability of graphene on N-polar GaN during MOCVD-based remote homoepitaxy. Molecular dynamics simulations, corroborated by experimental data, further substantiate that the thermochemical stability of graphene is reliant on the polarity of GaN, due to different reactions with hydrogen at high temperatures. Based on the N-polar remote homoepitaxy of μCs, the practical application of our findings was demonstrated in fabrication of flexible light-emitting diodes composed of p–n junction μCs with InGaN heterostructures. |
doi_str_mv | 10.1021/acsnano.3c06828 |
format | article |
fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_2204204</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2878018943</sourcerecordid><originalsourceid>FETCH-LOGICAL-a337t-99d06f90c88cf5f85d4d7dd9b70e67fe2b1dfeaa7f82fe5c45857087cffdcadb3</originalsourceid><addsrcrecordid>eNp1kM9KAzEQh4MoWKtnr8GTINtm_yZ7FKlVKFW0greQzU7YlN1kTVJob76Cr-iTuNLiTRiYGeb7zeFD6DImk5gk8VRIb4Sxk1SSgiXsCI3iMi0iwor34785j0_RmfdrQnLKaDFCq9lWQh-0NaLFqwZcZ2UDnZbD-hpEpVsddtgqPHeib8AAtgYvvz-_nm0rHJ6LJVbW4RfobAA863UQ2905OlGi9XBx6GP0dj9b3T1Ei6f5493tIhJpSkNUljUpVEkkY1LliuV1VtO6LitKoKAKkiquFQhBFUsU5DLLWU4Jo1KpWoq6Ssfoav_X-qC5lzqAbKQ1BmTgSUKyoQboeg_1zn5swAfeaS-hbYUBu_E8YZSRmJVZOqDTPSqd9d6B4r3TnXA7HhP-K5kfJPOD5CFxs08MB762Gzdo9P_SP_Ylgeg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2878018943</pqid></control><display><type>article</type><title>Exceptional Thermochemical Stability of Graphene on N‑Polar GaN for Remote Epitaxy</title><source>American Chemical Society:Jisc Collections:American Chemical Society Read & Publish Agreement 2022-2024 (Reading list)</source><creator>Choi, Joonghoon ; Jeong, Junseok ; Zhu, Xiangyu ; Kim, Junghwan ; Kang, Bong Kyun ; Wang, Qingxiao ; Park, Bo-In ; Lee, Seokje ; Kim, Jekyung ; Kim, Hyunseok ; Yoo, Jinkyoung ; Yi, Gyu-Chul ; Lee, Dong-Seon ; Kim, Jeehwan ; Hong, Suklyun ; Kim, Moon J. ; Hong, Young Joon</creator><creatorcontrib>Choi, Joonghoon ; Jeong, Junseok ; Zhu, Xiangyu ; Kim, Junghwan ; Kang, Bong Kyun ; Wang, Qingxiao ; Park, Bo-In ; Lee, Seokje ; Kim, Jekyung ; Kim, Hyunseok ; Yoo, Jinkyoung ; Yi, Gyu-Chul ; Lee, Dong-Seon ; Kim, Jeehwan ; Hong, Suklyun ; Kim, Moon J. ; Hong, Young Joon ; Sandia National Lab. (SNL-NM), Albuquerque, NM (United States) ; Los Alamos National Laboratory (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)</creatorcontrib><description>In this study, we investigate the thermochemical stability of graphene on the GaN substrate for metal–organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite excellent physical properties of GaN, making it a compelling choice for high-performance electronic and light-emitting device applications, the challenge of thermochemical decomposition of graphene on a GaN substrate at high temperatures has obstructed the achievement of remote homoepitaxy via MOCVD. Our research uncovers an unexpected stability of graphene on N-polar GaN, thereby enabling the MOCVD-based remote homoepitaxy of N-polar GaN. Our comparative analysis of N- and Ga-polar GaN substrates reveals markedly different outcomes: while a graphene/N-polar GaN substrate produces releasable microcrystals (μCs), a graphene/Ga-polar GaN substrate yields nonreleasable thin films. We attribute this discrepancy to the polarity-dependent thermochemical stability of graphene on the GaN substrate and its subsequent reaction with hydrogen. Evidence obtained from Raman spectroscopy, electron microscopic analyses, and overlayer delamination points to a pronounced thermochemical stability of graphene on N-polar GaN during MOCVD-based remote homoepitaxy. Molecular dynamics simulations, corroborated by experimental data, further substantiate that the thermochemical stability of graphene is reliant on the polarity of GaN, due to different reactions with hydrogen at high temperatures. Based on the N-polar remote homoepitaxy of μCs, the practical application of our findings was demonstrated in fabrication of flexible light-emitting diodes composed of p–n junction μCs with InGaN heterostructures.</description><identifier>ISSN: 1936-0851</identifier><identifier>EISSN: 1936-086X</identifier><identifier>DOI: 10.1021/acsnano.3c06828</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><subject>deformable light-emitting diode ; INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY ; N-polar GaN ; polarity ; remote epitaxy ; thermochemical stability</subject><ispartof>ACS nano, 2023-11, Vol.17 (21), p.21678-21689</ispartof><rights>2023 American Chemical Society</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a337t-99d06f90c88cf5f85d4d7dd9b70e67fe2b1dfeaa7f82fe5c45857087cffdcadb3</citedby><cites>FETCH-LOGICAL-a337t-99d06f90c88cf5f85d4d7dd9b70e67fe2b1dfeaa7f82fe5c45857087cffdcadb3</cites><orcidid>0009-0006-6642-7826 ; 0000-0002-1831-8004 ; 0000-0002-9578-6979 ; 0000-0002-2972-493X ; 0000-0001-6504-9209 ; 0000-0002-7703-3455 ; 0000-0002-1547-0967 ; 0000-0003-2706-8702 ; 0000000215470967 ; 0000000327068702 ; 0000000165049209 ; 0000000218318004 ; 0000000277033455 ; 0009000666427826 ; 000000022972493X ; 0000000295786979</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/servlets/purl/2204204$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Choi, Joonghoon</creatorcontrib><creatorcontrib>Jeong, Junseok</creatorcontrib><creatorcontrib>Zhu, Xiangyu</creatorcontrib><creatorcontrib>Kim, Junghwan</creatorcontrib><creatorcontrib>Kang, Bong Kyun</creatorcontrib><creatorcontrib>Wang, Qingxiao</creatorcontrib><creatorcontrib>Park, Bo-In</creatorcontrib><creatorcontrib>Lee, Seokje</creatorcontrib><creatorcontrib>Kim, Jekyung</creatorcontrib><creatorcontrib>Kim, Hyunseok</creatorcontrib><creatorcontrib>Yoo, Jinkyoung</creatorcontrib><creatorcontrib>Yi, Gyu-Chul</creatorcontrib><creatorcontrib>Lee, Dong-Seon</creatorcontrib><creatorcontrib>Kim, Jeehwan</creatorcontrib><creatorcontrib>Hong, Suklyun</creatorcontrib><creatorcontrib>Kim, Moon J.</creatorcontrib><creatorcontrib>Hong, Young Joon</creatorcontrib><creatorcontrib>Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)</creatorcontrib><creatorcontrib>Los Alamos National Laboratory (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)</creatorcontrib><title>Exceptional Thermochemical Stability of Graphene on N‑Polar GaN for Remote Epitaxy</title><title>ACS nano</title><addtitle>ACS Nano</addtitle><description>In this study, we investigate the thermochemical stability of graphene on the GaN substrate for metal–organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite excellent physical properties of GaN, making it a compelling choice for high-performance electronic and light-emitting device applications, the challenge of thermochemical decomposition of graphene on a GaN substrate at high temperatures has obstructed the achievement of remote homoepitaxy via MOCVD. Our research uncovers an unexpected stability of graphene on N-polar GaN, thereby enabling the MOCVD-based remote homoepitaxy of N-polar GaN. Our comparative analysis of N- and Ga-polar GaN substrates reveals markedly different outcomes: while a graphene/N-polar GaN substrate produces releasable microcrystals (μCs), a graphene/Ga-polar GaN substrate yields nonreleasable thin films. We attribute this discrepancy to the polarity-dependent thermochemical stability of graphene on the GaN substrate and its subsequent reaction with hydrogen. Evidence obtained from Raman spectroscopy, electron microscopic analyses, and overlayer delamination points to a pronounced thermochemical stability of graphene on N-polar GaN during MOCVD-based remote homoepitaxy. Molecular dynamics simulations, corroborated by experimental data, further substantiate that the thermochemical stability of graphene is reliant on the polarity of GaN, due to different reactions with hydrogen at high temperatures. Based on the N-polar remote homoepitaxy of μCs, the practical application of our findings was demonstrated in fabrication of flexible light-emitting diodes composed of p–n junction μCs with InGaN heterostructures.</description><subject>deformable light-emitting diode</subject><subject>INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY</subject><subject>N-polar GaN</subject><subject>polarity</subject><subject>remote epitaxy</subject><subject>thermochemical stability</subject><issn>1936-0851</issn><issn>1936-086X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp1kM9KAzEQh4MoWKtnr8GTINtm_yZ7FKlVKFW0greQzU7YlN1kTVJob76Cr-iTuNLiTRiYGeb7zeFD6DImk5gk8VRIb4Sxk1SSgiXsCI3iMi0iwor34785j0_RmfdrQnLKaDFCq9lWQh-0NaLFqwZcZ2UDnZbD-hpEpVsddtgqPHeib8AAtgYvvz-_nm0rHJ6LJVbW4RfobAA863UQ2905OlGi9XBx6GP0dj9b3T1Ei6f5493tIhJpSkNUljUpVEkkY1LliuV1VtO6LitKoKAKkiquFQhBFUsU5DLLWU4Jo1KpWoq6Ssfoav_X-qC5lzqAbKQ1BmTgSUKyoQboeg_1zn5swAfeaS-hbYUBu_E8YZSRmJVZOqDTPSqd9d6B4r3TnXA7HhP-K5kfJPOD5CFxs08MB762Gzdo9P_SP_Ylgeg</recordid><startdate>20231114</startdate><enddate>20231114</enddate><creator>Choi, Joonghoon</creator><creator>Jeong, Junseok</creator><creator>Zhu, Xiangyu</creator><creator>Kim, Junghwan</creator><creator>Kang, Bong Kyun</creator><creator>Wang, Qingxiao</creator><creator>Park, Bo-In</creator><creator>Lee, Seokje</creator><creator>Kim, Jekyung</creator><creator>Kim, Hyunseok</creator><creator>Yoo, Jinkyoung</creator><creator>Yi, Gyu-Chul</creator><creator>Lee, Dong-Seon</creator><creator>Kim, Jeehwan</creator><creator>Hong, Suklyun</creator><creator>Kim, Moon J.</creator><creator>Hong, Young Joon</creator><general>American Chemical Society</general><general>American Chemical Society (ACS)</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>OIOZB</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0009-0006-6642-7826</orcidid><orcidid>https://orcid.org/0000-0002-1831-8004</orcidid><orcidid>https://orcid.org/0000-0002-9578-6979</orcidid><orcidid>https://orcid.org/0000-0002-2972-493X</orcidid><orcidid>https://orcid.org/0000-0001-6504-9209</orcidid><orcidid>https://orcid.org/0000-0002-7703-3455</orcidid><orcidid>https://orcid.org/0000-0002-1547-0967</orcidid><orcidid>https://orcid.org/0000-0003-2706-8702</orcidid><orcidid>https://orcid.org/0000000215470967</orcidid><orcidid>https://orcid.org/0000000327068702</orcidid><orcidid>https://orcid.org/0000000165049209</orcidid><orcidid>https://orcid.org/0000000218318004</orcidid><orcidid>https://orcid.org/0000000277033455</orcidid><orcidid>https://orcid.org/0009000666427826</orcidid><orcidid>https://orcid.org/000000022972493X</orcidid><orcidid>https://orcid.org/0000000295786979</orcidid></search><sort><creationdate>20231114</creationdate><title>Exceptional Thermochemical Stability of Graphene on N‑Polar GaN for Remote Epitaxy</title><author>Choi, Joonghoon ; Jeong, Junseok ; Zhu, Xiangyu ; Kim, Junghwan ; Kang, Bong Kyun ; Wang, Qingxiao ; Park, Bo-In ; Lee, Seokje ; Kim, Jekyung ; Kim, Hyunseok ; Yoo, Jinkyoung ; Yi, Gyu-Chul ; Lee, Dong-Seon ; Kim, Jeehwan ; Hong, Suklyun ; Kim, Moon J. ; Hong, Young Joon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a337t-99d06f90c88cf5f85d4d7dd9b70e67fe2b1dfeaa7f82fe5c45857087cffdcadb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>deformable light-emitting diode</topic><topic>INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY</topic><topic>N-polar GaN</topic><topic>polarity</topic><topic>remote epitaxy</topic><topic>thermochemical stability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Choi, Joonghoon</creatorcontrib><creatorcontrib>Jeong, Junseok</creatorcontrib><creatorcontrib>Zhu, Xiangyu</creatorcontrib><creatorcontrib>Kim, Junghwan</creatorcontrib><creatorcontrib>Kang, Bong Kyun</creatorcontrib><creatorcontrib>Wang, Qingxiao</creatorcontrib><creatorcontrib>Park, Bo-In</creatorcontrib><creatorcontrib>Lee, Seokje</creatorcontrib><creatorcontrib>Kim, Jekyung</creatorcontrib><creatorcontrib>Kim, Hyunseok</creatorcontrib><creatorcontrib>Yoo, Jinkyoung</creatorcontrib><creatorcontrib>Yi, Gyu-Chul</creatorcontrib><creatorcontrib>Lee, Dong-Seon</creatorcontrib><creatorcontrib>Kim, Jeehwan</creatorcontrib><creatorcontrib>Hong, Suklyun</creatorcontrib><creatorcontrib>Kim, Moon J.</creatorcontrib><creatorcontrib>Hong, Young Joon</creatorcontrib><creatorcontrib>Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)</creatorcontrib><creatorcontrib>Los Alamos National Laboratory (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)</creatorcontrib><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>OSTI.GOV - Hybrid</collection><collection>OSTI.GOV</collection><jtitle>ACS nano</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Choi, Joonghoon</au><au>Jeong, Junseok</au><au>Zhu, Xiangyu</au><au>Kim, Junghwan</au><au>Kang, Bong Kyun</au><au>Wang, Qingxiao</au><au>Park, Bo-In</au><au>Lee, Seokje</au><au>Kim, Jekyung</au><au>Kim, Hyunseok</au><au>Yoo, Jinkyoung</au><au>Yi, Gyu-Chul</au><au>Lee, Dong-Seon</au><au>Kim, Jeehwan</au><au>Hong, Suklyun</au><au>Kim, Moon J.</au><au>Hong, Young Joon</au><aucorp>Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)</aucorp><aucorp>Los Alamos National Laboratory (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Exceptional Thermochemical Stability of Graphene on N‑Polar GaN for Remote Epitaxy</atitle><jtitle>ACS nano</jtitle><addtitle>ACS Nano</addtitle><date>2023-11-14</date><risdate>2023</risdate><volume>17</volume><issue>21</issue><spage>21678</spage><epage>21689</epage><pages>21678-21689</pages><issn>1936-0851</issn><eissn>1936-086X</eissn><abstract>In this study, we investigate the thermochemical stability of graphene on the GaN substrate for metal–organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite excellent physical properties of GaN, making it a compelling choice for high-performance electronic and light-emitting device applications, the challenge of thermochemical decomposition of graphene on a GaN substrate at high temperatures has obstructed the achievement of remote homoepitaxy via MOCVD. Our research uncovers an unexpected stability of graphene on N-polar GaN, thereby enabling the MOCVD-based remote homoepitaxy of N-polar GaN. Our comparative analysis of N- and Ga-polar GaN substrates reveals markedly different outcomes: while a graphene/N-polar GaN substrate produces releasable microcrystals (μCs), a graphene/Ga-polar GaN substrate yields nonreleasable thin films. We attribute this discrepancy to the polarity-dependent thermochemical stability of graphene on the GaN substrate and its subsequent reaction with hydrogen. Evidence obtained from Raman spectroscopy, electron microscopic analyses, and overlayer delamination points to a pronounced thermochemical stability of graphene on N-polar GaN during MOCVD-based remote homoepitaxy. Molecular dynamics simulations, corroborated by experimental data, further substantiate that the thermochemical stability of graphene is reliant on the polarity of GaN, due to different reactions with hydrogen at high temperatures. Based on the N-polar remote homoepitaxy of μCs, the practical application of our findings was demonstrated in fabrication of flexible light-emitting diodes composed of p–n junction μCs with InGaN heterostructures.</abstract><cop>United States</cop><pub>American Chemical Society</pub><doi>10.1021/acsnano.3c06828</doi><tpages>12</tpages><orcidid>https://orcid.org/0009-0006-6642-7826</orcidid><orcidid>https://orcid.org/0000-0002-1831-8004</orcidid><orcidid>https://orcid.org/0000-0002-9578-6979</orcidid><orcidid>https://orcid.org/0000-0002-2972-493X</orcidid><orcidid>https://orcid.org/0000-0001-6504-9209</orcidid><orcidid>https://orcid.org/0000-0002-7703-3455</orcidid><orcidid>https://orcid.org/0000-0002-1547-0967</orcidid><orcidid>https://orcid.org/0000-0003-2706-8702</orcidid><orcidid>https://orcid.org/0000000215470967</orcidid><orcidid>https://orcid.org/0000000327068702</orcidid><orcidid>https://orcid.org/0000000165049209</orcidid><orcidid>https://orcid.org/0000000218318004</orcidid><orcidid>https://orcid.org/0000000277033455</orcidid><orcidid>https://orcid.org/0009000666427826</orcidid><orcidid>https://orcid.org/000000022972493X</orcidid><orcidid>https://orcid.org/0000000295786979</orcidid><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | ISSN: 1936-0851 |
ispartof | ACS nano, 2023-11, Vol.17 (21), p.21678-21689 |
issn | 1936-0851 1936-086X |
language | eng |
recordid | cdi_osti_scitechconnect_2204204 |
source | American Chemical Society:Jisc Collections:American Chemical Society Read & Publish Agreement 2022-2024 (Reading list) |
subjects | deformable light-emitting diode INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY N-polar GaN polarity remote epitaxy thermochemical stability |
title | Exceptional Thermochemical Stability of Graphene on N‑Polar GaN for Remote Epitaxy |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T04%3A19%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Exceptional%20Thermochemical%20Stability%20of%20Graphene%20on%20N%E2%80%91Polar%20GaN%20for%20Remote%20Epitaxy&rft.jtitle=ACS%20nano&rft.au=Choi,%20Joonghoon&rft.aucorp=Sandia%20National%20Lab.%20(SNL-NM),%20Albuquerque,%20NM%20(United%20States)&rft.date=2023-11-14&rft.volume=17&rft.issue=21&rft.spage=21678&rft.epage=21689&rft.pages=21678-21689&rft.issn=1936-0851&rft.eissn=1936-086X&rft_id=info:doi/10.1021/acsnano.3c06828&rft_dat=%3Cproquest_osti_%3E2878018943%3C/proquest_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-a337t-99d06f90c88cf5f85d4d7dd9b70e67fe2b1dfeaa7f82fe5c45857087cffdcadb3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2878018943&rft_id=info:pmid/&rfr_iscdi=true |