Spatially resolvable optical emission spectrometer for analyzing density uniformity of semiconductor process plasma

We proposed a spatially resolved optical emission spectrometer (SROES) for analyzing the uniformity of plasma density for semiconductor processes. To enhance the spatial resolution of the SROES, we constructed a SROES system using a series of lenses, apertures, and pinholes. We calculated the spatia...

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Bibliographic Details
Published in:Review of scientific instruments 2010-10, Vol.81 (10), p.103109-103109-4
Main Authors: Oh, Changhoon, Ryoo, Hoonchul, Lee, Hyungwoo, Kim, Se-Yeon, Yi, Hun-Jung, Hahn, Jae W.
Format: Article
Language:English
Subjects:
APERTURES
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
ETCHING
FLUORINE
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
LENSES
MATERIALS SCIENCE
OPTICAL SPECTROMETERS
PHOTON EMISSION
PLASMA DENSITY
RADICALS
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
SPATIAL RESOLUTION
THIN FILMS
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Summary:We proposed a spatially resolved optical emission spectrometer (SROES) for analyzing the uniformity of plasma density for semiconductor processes. To enhance the spatial resolution of the SROES, we constructed a SROES system using a series of lenses, apertures, and pinholes. We calculated the spatial resolution of the SROES for the variation of pinhole size, and our calculated results were in good agreement with the measured spatial variation of the constructed SROES. The performance of the SROES was also verified by detecting the correlation between the distribution of a fluorine radical in inductively coupled plasma etch process and the etch rate of a SiO 2 film on a silicon wafer.
ISSN:0034-6748
1089-7623
DOI:10.1063/1.3488104