Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range

The procedure of manufacturing silicon photodiodes with an integrated Zr/Si filter for extreme ultraviolet (EUV) spectral range is developed. A setup for measuring the sensitivity profile of detectors with spatial resolution better than 100 {mu}m is fabricated. The optical properties of silicon phot...

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Bibliographic Details
Published in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2012-10, Vol.42 (10), p.943-948
Main Authors: Aruev, P N, Barysheva, Mariya M, Ber, B Ya, Zabrodskaya, N V, Zabrodskii, V V, Lopatin, A Ya, Pestov, Alexey E, Petrenko, M V, Polkovnikov, V N, Salashchenko, Nikolai N, Sukhanov, V L, Chkhalo, Nikolai I
Format: Article
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
EXTREME ULTRAVIOLET RADIATION
FILTERS
OPTICAL PROPERTIES
PHOTODETECTORS
PHOTODIODES
SENSITIVITY
SILICON
SPATIAL RESOLUTION
VISIBLE RADIATION
ZIRCONIUM
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Summary:The procedure of manufacturing silicon photodiodes with an integrated Zr/Si filter for extreme ultraviolet (EUV) spectral range is developed. A setup for measuring the sensitivity profile of detectors with spatial resolution better than 100 {mu}m is fabricated. The optical properties of silicon photodiodes in the EUV and visible spectral ranges are investigated. Some characteristics of SPD-100UV diodes with Zr/Si coating and without it, as well as of AXUV-100 diodes, are compared. In all types of detectors a narrow region beyond the operating aperture is found to be sensitive to the visible light. (photodetectors)
ISSN:1063-7818
1468-4799
DOI:10.1070/QE2012v042n10ABEH014901