Synthesis and characterization of GaN thin films deposited on different substrates using a low-cost electrochemical deposition technique

Gallium nitride GaN thin films were deposited on three different substrates; Si (111), Si (100) and ITO coated glass using electrochemical deposition technique at 20 Degree-Sign C. A mixture of gallium nitrate, ammonium nitrate was used as electrolyte. The deposited films were investigated at room t...

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Bibliographic Details
Main Authors: Al-Heuseen, K., Hashim, M. R., School of Physics, Universiti Sains Malaysia, 11800-Penang
Format: Conference Proceeding
Language:English
Subjects:
AMMONIUM NITRATES
CHEMICAL ANALYSIS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CUBIC LATTICES
ELECTRODEPOSITION
GALLIUM NITRATES
GALLIUM NITRIDES
GLASS
HEXAGONAL LATTICES
MATERIALS SCIENCE
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
SYNTHESIS
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
X-RAY DIFFRACTION
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Summary:Gallium nitride GaN thin films were deposited on three different substrates; Si (111), Si (100) and ITO coated glass using electrochemical deposition technique at 20 Degree-Sign C. A mixture of gallium nitrate, ammonium nitrate was used as electrolyte. The deposited films were investigated at room temperature by a series of material characterization techniques, namely; scanning electron microscopy (SEM), EDX and X-ray diffraction (XRD). SEM images and EDX results indicated that the growth of GaN films varies according to the substrates. XRD analyses showed the presence of hexagonal wurtzite and cubic zinc blende GaN phases with the crystallite size around 18-29 nm.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4751580