Introduction of the MC3-II/GP system, medium current ion implanter with enhanced multi-charge beam current

The MC3-II/GP is a leading-edge single-wafer medium-current ion implanter, newly developed by SEN Corporation. It demonstrates exceptional productivity based on a high speed wafer-handling station and enhanced beam current. It covers a substantively wider energy range in order to fully meet advanced...

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Main Authors: Koike, Masazumi, Sato, Fumiaki, Sano, Makoto, Kawatsu, Sho, Kariya, Hiroyuki, Kimura, Yasuhiko, Kudo, Tetsuya, Shiraishi, Miyuki, Shinozuka, Masamitsu, Takahashi, Yuji, Ishida, Yuji, Tsukihara, Mitsukuni, Ueno, Kazuyoshi, Sugitani, Michiro
Format: Conference Proceeding
Language:English
Subjects:
BEAM CURRENTS
BEAM EXTRACTION
BEAM PRODUCTION
BEAM TRANSPORT
COBALT OXIDES
ELECTRIC ARCS
FABRICATION
ION BEAMS
ION IMPLANTATION
ION SOURCES
LIFETIME
PARTICLE ACCELERATORS
PLASMA
PLASMA DENSITY
PRODUCTIVITY
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Summary:The MC3-II/GP is a leading-edge single-wafer medium-current ion implanter, newly developed by SEN Corporation. It demonstrates exceptional productivity based on a high speed wafer-handling station and enhanced beam current. It covers a substantively wider energy range in order to fully meet advanced device requirements. Retaining the superior features of the MC3-II/WR, the MC3-II/GP provides a remarkable increase of multiply-charged beam current coupled with longer ion source lifetime. Another advanced feature of the MC3-II/GP is a 30 second or 14% reduction in auto beam setup time. These improvements enable a fabrication line to reduce the total number of ion implanters and dramatically reduce COO.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4766557