Plasma chemistry study of PLAD processes

Plasma doping (PLAD) shows very different impurity profiles compared to the conventional beam-line-based ion implantations due to its non-mass separation property and plasma environment. There is no simulation for PLAD process so far due to a lack of a dopant profile model. Several factors determine...

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Bibliographic Details
Main Authors: Qin Shu, Brumfield, Kyle, Liu, Lequn Jennifer, Hu, Yongjun Jeff, McTeer, Allen, Hsu, Wei Hui, Wang Maoying, Micron Technology Inc., Boise, ID 83707
Format: Conference Proceeding
Language:English
Subjects:
ARSENIC HYDRIDES
BORON FLUORIDES
BORON HYDRIDES
CHEMISTRY
DEPOSITION
ETCHING
GERMANIUM HYDRIDES
INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY
MATERIALS SCIENCE
METHANE
PHOSPHORUS HYDRIDES
PLASMA
PLASMA IMPURITIES
SPUTTERING
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Summary:Plasma doping (PLAD) shows very different impurity profiles compared to the conventional beam-line-based ion implantations due to its non-mass separation property and plasma environment. There is no simulation for PLAD process so far due to a lack of a dopant profile model. Several factors determine impurity profiles of PLAD process. The most significant factors are: plasma chemistry and deposition/etching characteristics of multi-ion species plasmas. In this paper, we present plasma chemistry and deposition/etching characteristics of PLAD processes versus co-gas dilutions. Four dopant plasmas including B{sub 2}H{sub 6}, BF{sub 3}, AsH{sub 3}, and PH{sub 3}, and two non-dopant plasmas including CH{sub 4} and GeH{sub 4} are studied and demonstrated.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4766568