Strong atomic ordering in Gd-doped GaN

Gd-doped GaN (Ga1−xGdxN) thin films were grown on a GaN(001) template by radio frequency plasma-assisted molecular beam epitaxy and characterized by means of x-ray diffraction (XRD) and transmission electron microscopy (TEM). Three samples with a different Gd composition were prepared in this study:...

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Bibliographic Details
Published in:Applied physics letters 2012-09, Vol.101 (10)
Main Authors: Ishimaru, Manabu, Higashi, Kotaro, Hasegawa, Shigehiko, Asahi, Hajime, Sato, Kazuhisa, Konno, Toyohiko J.
Format: Article
Language:English
Subjects:
Concentration (composition)
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Diffraction
DOPED MATERIALS
GADOLINIUM ADDITIONS
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
PERIODICITY
PLASMA
RADIOWAVE RADIATION
SEMICONDUCTOR MATERIALS
SUPERLATTICES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
Wurtzite
X-RAY DIFFRACTION
X-rays
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Summary:Gd-doped GaN (Ga1−xGdxN) thin films were grown on a GaN(001) template by radio frequency plasma-assisted molecular beam epitaxy and characterized by means of x-ray diffraction (XRD) and transmission electron microscopy (TEM). Three samples with a different Gd composition were prepared in this study: x = 0.02, 0.05, and 0.08. XRD and TEM results revealed that the low Gd concentration GaN possesses the wurtzite structure. On the other hand, it was found that an ordered phase with a quadruple-periodicity along the [001] direction in the wurtzite structure is formed throughout the film with x = 0.08. We proposed the atomistic model for the superlattice structure observed here.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4751245