Realization of compressively strained GaN films grown on Si(110) substrates by inserting a thin AlN/GaN superlattice interlayer

We investigate the strain properties of GaN films grown by plasma-assisted molecular beam epitaxy on Si(110) substrates. It is found that the strain of the GaN film can be converted from a tensile to a compressive state simply by inserting a thin AlN/GaN superlattice structure (SLs) within the GaN f...

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Bibliographic Details
Published in:Applied physics letters 2012-07, Vol.101 (3)
Main Authors: Shen, X. Q., Takahashi, T., Kawashima, H., Ide, T., Shimizu, M.
Format: Article
Language:English
Subjects:
ALUMINIUM NITRIDES
Aluminum nitride
COOLING
ELECTRONIC EQUIPMENT
GALLIUM NITRIDES
Interlayers
LAYERS
MATERIALS SCIENCE
MODULATION
MOLECULAR BEAM EPITAXY
PLASMA
SEMICONDUCTOR MATERIALS
SILICON
SILICON COMPOUNDS
Silicon substrates
Strain
STRAINS
SUBSTRATES
SUPERLATTICES
Thick films
THIN FILMS
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Summary:We investigate the strain properties of GaN films grown by plasma-assisted molecular beam epitaxy on Si(110) substrates. It is found that the strain of the GaN film can be converted from a tensile to a compressive state simply by inserting a thin AlN/GaN superlattice structure (SLs) within the GaN film. The GaN layers seperated by the SLs can have different strain states, which indicates that the SLs plays a key role in the strain modulation during the growth and the cooling down processes. Using this simple technique, we grow a crack-free GaN film exceeding 2-μm-thick. The realization of the compressively strained GaN film makes it possible to grow thick GaN films without crack generation on Si substrates for optic and electronic device applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4737874