Germanium nanowire growth controlled by surface diffusion effects

Germanium nanowires (NWs) were grown onto Ge(111) substrates by the vapor-liquid-solid process using gold droplets. The growth was carried out in a molecular beam epitaxy chamber at substrate temperatures between 370 Degree-Sign C and 510 Degree-Sign C. The resulting nanowire growth rate turns out t...

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Bibliographic Details
Published in:Applied physics letters 2012-07, Vol.101 (4), p.43105
Main Authors: Schmidtbauer, Jan, Bansen, Roman, Heimburger, Robert, Teubner, Thomas, Boeck, Torsten, Fornari, Roberto
Format: Article
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIFFUSION
DIFFUSION LENGTH
DROPLETS
GERMANIUM
GOLD
LIQUIDS
MOLECULAR BEAM EPITAXY
NANOSCIENCE AND NANOTECHNOLOGY
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SOLIDS
SUBSTRATES
SURFACES
TEMPERATURE DEPENDENCE
VAPORS
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Summary:Germanium nanowires (NWs) were grown onto Ge(111) substrates by the vapor-liquid-solid process using gold droplets. The growth was carried out in a molecular beam epitaxy chamber at substrate temperatures between 370 Degree-Sign C and 510 Degree-Sign C. The resulting nanowire growth rate turns out to be highly dependent on the substrate temperature exhibiting the maximum at T = 430 Degree-Sign C. The temperature dependence of growth rate can be attributed to surface diffusion both along the substrate and nanowire sidewalls. Analyzing the diffusive material transport yields a diffusion length of 126 nm at a substrate temperature of 430 Degree-Sign C.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4737004