Electrical effect of titanium diffusion on amorphous indium gallium zinc oxide

In this work, thermal diffusion phenomenon of Ti into amorphous indium gallium zinc oxide ( alpha -IGZO) was carefully investigated with secondary ion mass spectroscopy, I-V, and Rs measurement systems and HSC chemistry simulation tool. According to the experimental and simulated results, the diffus...

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Bibliographic Details
Published in:Applied physics letters 2012-11, Vol.101 (21)
Main Authors: Choi, Seung-Ha, Jung, Woo-Shik, Park, Jin-Hong
Format: Article
Language:English
Subjects:
ANNEALING
ATOMS
Diffusion
DISSOCIATION
ELECTRIC CONDUCTIVITY
FREE ENERGY
GALLIUM COMPOUNDS
Indium
INDIUM COMPOUNDS
ION MICROPROBE ANALYSIS
IONS
MASS SPECTRA
MATERIALS SCIENCE
Oxidation
Secondary ion mass spectroscopy
SEMICONDUCTOR MATERIALS
SIMULATION
THERMAL DIFFUSION
Titanium
TITANIUM ADDITIONS
Volt-ampere characteristics
Zinc oxide
ZINC OXIDES
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Summary:In this work, thermal diffusion phenomenon of Ti into amorphous indium gallium zinc oxide ( alpha -IGZO) was carefully investigated with secondary ion mass spectroscopy, I-V, and Rs measurement systems and HSC chemistry simulation tool. According to the experimental and simulated results, the diffused Ti atoms were easily oxidized due to its lowest oxidation free energy. Since oxygen atoms were decomposed from the alpha -IGZO during the oxidation of Ti, the number of oxygen vacancies working as electron-donating sites in alpha -IGZO was dramatically increased, contributing to the decrease of resistivity ( rho ) from 1.96 Omega cm (as-deposited alpha -IGZO) to 1.33 10-3 Omega cm (350 degree C annealed alpha -IGZO).
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4768216