Impact of the surface-near silicon substrate properties on the microstructure of sputter-deposited AlN thin films

In micro-/nanomachined devices and systems, aluminum nitride (AlN) thin films are widely used due to their piezoelectric properties. This work evaluates the potential of modifying the interface between the AlN thin film and the silicon (Si) wafer serving as bottom electrode for optimized crystallogr...

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Bibliographic Details
Published in:Applied physics letters 2012-11, Vol.101 (22)
Main Authors: Schneider, M., Bittner, A., Patocka, F., Stöger-Pollach, M., Halwax, E., Schmid, U.
Format: Article
Language:English
Subjects:
ALUMINIUM
ALUMINIUM NITRIDES
Aluminum nitride
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL STRUCTURE
CRYSTALLOGRAPHY
INTERFACES
LEAKAGE CURRENT
MATERIALS SCIENCE
MICROSTRUCTURE
Nanostructure
Orientation
PIEZOELECTRICITY
SEMICONDUCTOR MATERIALS
SILICON
Silicon substrates
SPUTTERING
SUBSTRATES
SURFACES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
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Summary:In micro-/nanomachined devices and systems, aluminum nitride (AlN) thin films are widely used due to their piezoelectric properties. This work evaluates the potential of modifying the interface between the AlN thin film and the silicon (Si) wafer serving as bottom electrode for optimized crystallographic orientation and, hence, improved electrical and piezoelectric properties. The films were analyzed using temperature-dependant leakage current measurements, transmission electron microscopy, and x-ray diffraction. By preconditioning of the Si substrate surface applying sputter etching prior to film deposition, leakage current levels are substantially decreased and an increased (002) orientation of the AlN grains is observed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4768951