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Critical shell thickness for InAs-Al{sub x}In{sub 1-x}As(P) core-shell nanowires

InAs nanowires with Al{sub x}In{sub 1-x}P or Al{sub x}In{sub 1-x}As shells were grown on GaAs substrates by the Au-assisted vapour-liquid-solid method in a gas source molecular beam epitaxy system. Core diameters and shell thicknesses were measured by transmission electron microscopy (TEM). These me...

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Published in:	Journal of applied physics 2012-12, Vol.112 (12)
Main Authors:	Haapamaki, C. M., LaPierre, R. R., Baugh, J.
Format:	Article
Language:	English
Subjects:	ALUMINIUM COMPOUNDS EDGE DISLOCATIONS ELECTRON DIFFRACTION FLEXIBILITY GALLIUM ARSENIDES INDIUM ARSENIDES INTERFACES LAYERS MOLECULAR BEAM EPITAXY NANOSCIENCE AND NANOTECHNOLOGY QUANTUM WIRES RELAXATION SEMICONDUCTOR MATERIALS SOLIDS STRAINS SUBSTRATES THICKNESS TRANSFORMATIONS TRANSMISSION ELECTRON MICROSCOPY
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container_title	Journal of applied physics
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creator	Haapamaki, C. M. LaPierre, R. R. Baugh, J.
description	InAs nanowires with Al{sub x}In{sub 1-x}P or Al{sub x}In{sub 1-x}As shells were grown on GaAs substrates by the Au-assisted vapour-liquid-solid method in a gas source molecular beam epitaxy system. Core diameters and shell thicknesses were measured by transmission electron microscopy (TEM). These measurements were then related to selected area diffraction patterns to verify either interface coherency or relaxation through misfit dislocations. A theoretical strain model is presented to determine the critical shell thickness for given core diameters. Zincblende stiffness parameters are transformed to their wurtzite counterparts via a well known tensor transformation. An energy criterion is then given to determine the shell thickness, at which coherency is lost and dislocations become favourable. Our model only considers axial strain relieved by edge dislocations since they were the only type of dislocation observed directly by TEM.
doi_str_mv	10.1063/1.4769735
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subjects	ALUMINIUM COMPOUNDS EDGE DISLOCATIONS ELECTRON DIFFRACTION FLEXIBILITY GALLIUM ARSENIDES INDIUM ARSENIDES INTERFACES LAYERS MOLECULAR BEAM EPITAXY NANOSCIENCE AND NANOTECHNOLOGY QUANTUM WIRES RELAXATION SEMICONDUCTOR MATERIALS SOLIDS STRAINS SUBSTRATES THICKNESS TRANSFORMATIONS TRANSMISSION ELECTRON MICROSCOPY
title	Critical shell thickness for InAs-Al{sub x}In{sub 1-x}As(P) core-shell nanowires
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