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Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application

The experimental study of the valence band offset (ΔEv) of a mixed As/Sb type-II staggered gap GaAs0.35Sb0.65/In0.7Ga0.3As heterostructure used as source/channel junction of n-channel tunnel field effect transistor (TFET) grown by molecular beam epitaxy was investigated by x-ray photoelectron spectr...

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Bibliographic Details
Published in:Journal of applied physics 2013-01, Vol.113 (2)
Main Authors: Zhu, Y., Jain, N., Mohata, D. K., Datta, S., Lubyshev, D., Fastenau, J. M., Liu, A. K., Hudait, M. K.
Format: Article
Language:English
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Summary:The experimental study of the valence band offset (ΔEv) of a mixed As/Sb type-II staggered gap GaAs0.35Sb0.65/In0.7Ga0.3As heterostructure used as source/channel junction of n-channel tunnel field effect transistor (TFET) grown by molecular beam epitaxy was investigated by x-ray photoelectron spectroscopy (XPS). Cross-sectional transmission electron micrograph shows high crystalline quality at the source/channel heterointerface. XPS results demonstrate a ΔEv of 0.39 ± 0.05 eV at the GaAs0.35Sb0.65/In0.7Ga0.3As heterointerface. The conduction band offset was calculated to be ∼0.49 eV using the band gap values of source and channel materials and the measured valence band offset. An effective tunneling barrier height of 0.21 eV was extracted, suggesting a great promise for designing a metamorphic mixed As/Sb type-II staggered gap TFET device structure for low-power logic applications.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4775606