Synchrotron nanoimaging of single In-rich InGaN nanowires

This work reports on the elemental distribution and local structure of single InxGa1–xN nanowires (NWs) grown by molecular beam epitaxy on Si (111) substrates using X-ray fluorescence nanoprobe. Ga and In maps reveal an inhomogeneous elemental distribution along the NWs, with a higher Ga concentrati...

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Bibliographic Details
Published in:Journal of applied physics 2013-04, Vol.113 (13)
Main Authors: Segura-Ruiz, J., Martínez-Criado, G., Chu, M. H., Denker, C., Malindretos, J., Rizzi, A.
Format: Article
Language:English
Subjects:
ABSORPTION
ABSORPTION SPECTROSCOPY
BEAMS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LAYERS
MOLECULAR BEAM EPITAXY
NANOSCIENCE AND NANOTECHNOLOGY
NITROGEN COMPOUNDS
QUANTUM WIRES
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
SYNCHROTRON RADIATION
X RADIATION
X-RAY FLUORESCENCE ANALYSIS
X-RAY SPECTROSCOPY
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Summary:This work reports on the elemental distribution and local structure of single InxGa1–xN nanowires (NWs) grown by molecular beam epitaxy on Si (111) substrates using X-ray fluorescence nanoprobe. Ga and In maps reveal an inhomogeneous elemental distribution along the NWs, with a higher Ga concentration at the bottom of the NW. Scanning electron microscopy images show that the inhomogeneous axial distribution is not correlated with a X-ray beam induced damage, and therefore, should be an intrinsic characteristic of the NWs arising from the growth process. Spatially resolved X-ray absorption near edge structure spectroscopy data acquired around the In K-edge show that the tetrahedral structure is preserved around the absorbing In-atoms all along the NW, and suggests that the compositional modulation could be affecting its long-range order.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4795544