Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices

The distribution of hydrostatic strains in Bi 3+ -doped InAs quantum dots embedded in a GaAs matrix are calculated in the context of the deformation-potential model. The dependences of strains in the material of spherical InAs quantum dots with substitutional (Bi → As) and interstitial (Bi) impuriti...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2013-03, Vol.47 (3), p.349-353
Main Authors: Peleshchak, R. M., Guba, S. K., Kuzyk, O. V., Kurilo, I. V., Dankiv, O. O.
Format: Article
Language:English
Subjects:
Analysis
BISMUTH IONS
DEFORMATION
DOPED MATERIALS
Gallium arsenide
GALLIUM ARSENIDES
IMPURITIES
INDIUM ARSENIDES
Low-Dimensional Systems
Magnetic Materials
Magnetism
MATERIALS SCIENCE
MORPHOLOGY
Nanotechnology
Physics
Physics and Astronomy
QUANTUM DOTS
Quantum Phenomena
Semiconductor Structures
STRAINS
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Summary:The distribution of hydrostatic strains in Bi 3+ -doped InAs quantum dots embedded in a GaAs matrix are calculated in the context of the deformation-potential model. The dependences of strains in the material of spherical InAs quantum dots with substitutional (Bi → As) and interstitial (Bi) impurities on the quantum-dot size are derived. The qualitative correlation of the model with the experiment is discussed. The data on the effect of doping on the morphology of self-assembled InAs:Bi quantum dots in a GaAs matrix are obtained.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782613030196