Comment on “Investigation of the device instability feature caused by electron trapping in pentacene field effect transistors” [Appl. Phys. Lett. 100, 063306 (2012)]

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Bibliographic Details
Published in:Applied physics letters 2013-07, Vol.103 (3)
Main Author: Lee, Jiyoul
Format: Article
Language:English
Subjects:
CARRIERS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRONS
FIELD EFFECT TRANSISTORS
HOLES
INSTABILITY
ORGANIC SEMICONDUCTORS
PENTACENE
RADIATION EFFECTS
TRAPPING
TRAPS
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ISSN:0003-6951
1077-3118
DOI:10.1063/1.4816013