Ionic conductivity and dielectric relaxation in {gamma}-irradiated TlGaTe{sub 2} crystals

The switching effect, field and temperature dependences of the permittivity and conductivity of TlGaTe{sub 2} crystals subjected to various {gamma}-irradiation doses are studied. Under rather low electric fields, the phenomenon of threshold switching with an S-shaped current-voltage characteristic c...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2013-05, Vol.47 (5)
Main Authors: Sardarli, R. M., Samedov, O. A., Abdullayev, A. P., Huseynov, E. K., Salmanov, F. T., Alieva, N. A., Agaeva, R. Sh
Format: Article
Language:English
Subjects:
CRYSTALS
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
GALLIUM TELLURIDES
INSTABILITY
IONIC CONDUCTIVITY
IRRADIATION
MATERIALS SCIENCE
MODULATION
PERMITTIVITY
RADIATION DOSES
RELAXATION
TEMPERATURE DEPENDENCE
THALLIUM TELLURIDES
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Summary:The switching effect, field and temperature dependences of the permittivity and conductivity of TlGaTe{sub 2} crystals subjected to various {gamma}-irradiation doses are studied. Under rather low electric fields, the phenomenon of threshold switching with an S-shaped current-voltage characteristic containing a portion with negative differential resistance is observed in the crystals. In the region of critical voltages, current and voltage oscillations and imposed modulation are observed. Possible mechanisms of switching, ionic conductivity, disorder, and electrical instability in TlGaTe{sub 2} crystals are discussed.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782613050199